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GRILLI, EMANUELE ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 10.466
EU - Europa 4.614
AS - Asia 1.932
AF - Africa 12
SA - Sud America 12
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 4
Totale 17.047
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Nazione #
US - Stati Uniti d'America 10.301
SE - Svezia 855
DE - Germania 826
CN - Cina 700
IE - Irlanda 621
SG - Singapore 575
UA - Ucraina 555
IT - Italia 484
RU - Federazione Russa 388
GB - Regno Unito 355
VN - Vietnam 237
HK - Hong Kong 232
CA - Canada 164
FI - Finlandia 147
AT - Austria 133
IN - India 91
FR - Francia 82
NL - Olanda 51
DK - Danimarca 39
BE - Belgio 34
TR - Turchia 24
JP - Giappone 23
PL - Polonia 17
IR - Iran 11
BR - Brasile 9
KR - Corea 8
TW - Taiwan 8
ID - Indonesia 6
MA - Marocco 6
AU - Australia 5
CH - Svizzera 4
LT - Lituania 4
MU - Mauritius 4
MY - Malesia 3
RO - Romania 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BG - Bulgaria 2
CL - Cile 2
CZ - Repubblica Ceca 2
ES - Italia 2
EU - Europa 2
GR - Grecia 2
HR - Croazia 2
HU - Ungheria 2
IL - Israele 2
NZ - Nuova Zelanda 2
PH - Filippine 2
TH - Thailandia 2
TN - Tunisia 2
BN - Brunei Darussalam 1
EC - Ecuador 1
IQ - Iraq 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MK - Macedonia 1
MN - Mongolia 1
MX - Messico 1
NP - Nepal 1
PK - Pakistan 1
PT - Portogallo 1
RS - Serbia 1
SA - Arabia Saudita 1
UZ - Uzbekistan 1
Totale 17.047
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Città #
Ann Arbor 1.496
Woodbridge 1.305
Fairfield 947
Chandler 845
Houston 737
Jacksonville 658
Dublin 601
Ashburn 532
Singapore 461
Frankfurt am Main 460
Seattle 370
Cambridge 363
Wilmington 360
Dearborn 346
Santa Clara 341
New York 312
Hong Kong 228
Princeton 228
Milan 149
Nanjing 149
Dong Ket 139
Shanghai 131
Vienna 129
Lachine 108
Lawrence 88
Beijing 83
Altamura 82
Boardman 76
Andover 59
San Diego 50
Southend 48
Nanchang 46
Shenyang 38
Hebei 35
Philadelphia 35
Brussels 34
Helsinki 34
Toronto 31
Huizen 30
Jinan 28
Falls Church 27
Changsha 25
Norwalk 25
Jiaxing 24
Mountain View 24
London 21
Los Angeles 21
Guangzhou 20
Nürnberg 18
Tianjin 18
Ottawa 17
Kraków 16
Hangzhou 14
Munich 13
Kunming 12
Fremont 11
San Mateo 11
Auburn Hills 10
Redmond 10
Hefei 9
Zhengzhou 9
Washington 8
Dallas 7
Edmonton 7
Orsay 7
Ningbo 6
Pune 6
Rome 6
Taipei 6
Tétouan 6
University Park 6
Amsterdam 5
Chicago 5
Hanoi 5
Hounslow 5
Jakarta 5
Kilburn 5
Lanzhou 5
Rho 5
Acton 4
Berlin 4
Cremona 4
Leawood 4
Loreto 4
Phoenix 4
São Paulo 4
Taizhou 4
Tappahannock 4
Wuhan 4
Zurich 4
Bovezzo 3
Central District 3
Changchun 3
Chiswick 3
Detroit 3
Florence 3
Fuzhou 3
Gif-sur-yvette 3
Lappeenranta 3
Laurel 3
Totale 12.726
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Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 304
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 221
Optical spin injection and spin lifetime in Ge heterostructures 220
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 218
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 214
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 211
Optical spin injection and spin lifetime in Ge heterostructures 211
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 204
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 204
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 203
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 198
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 198
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 197
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 188
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 188
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 186
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 186
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 183
Characterization Studies of Purified HgI2 Precursors 182
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 180
Raman Spectroscopy of Si1-xGex Epilayers 179
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 179
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 177
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 175
Long-lived conduction electron spins in Ge quantum wells 174
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 172
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 171
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 171
Phonon strain shift coefficients in SixGe1-x alloys 171
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 171
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 171
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 171
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 170
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 170
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 168
Optical spin injection in SiGe heterostructures 168
Thermal tunability of monolithic polymer microcavities 167
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 167
Direct gap related optical transitions in Ge/SiGe quantum wells 167
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 166
Emission lineshape in strain free quantum dot 165
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 162
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 161
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 161
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 159
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 158
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 157
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 154
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 154
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 153
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 152
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 152
Valley-dependent spin polarization and long-lived electron spins in germanium 152
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 151
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 150
Raman efficiency in SiGe alloys 149
Structural investigations of the α12 Si-Ge superstructure 148
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 147
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 147
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 146
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 145
InAs quantum dots grown on nonconventionally oriented GaAs substrates 145
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 145
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 145
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 144
Optical spin orientation in SiGe heterostructures 144
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 143
Determination of Raman Efficiency in SiGe Alloys 142
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 142
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 142
Ge Crystals on Si Show Their Light 142
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 141
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 140
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 139
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 139
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 138
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 137
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 137
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 136
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 135
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 135
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 135
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 134
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 134
3D island nucleation behaviour on high index substrates 132
Dislocation recombination and surface passivation of Ge micro-crystals on Si 132
Spin-resolved study of direct band-gap recombination in bulk Ge 131
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 130
Robust optical orientation of spins in Ge/SiGe quantum wells 130
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 129
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 127
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 124
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 123
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 121
Photoluminescence circular dichroism and spin polarization in Germanium 121
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 118
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 118
Strain-induced shift of phonon modes in Si1-xGex alloys 117
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 117
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 116
Totale 15.944
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Categoria #
all - tutte 57.715
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.715
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.279 0 0 0 0 0 0 408 191 273 172 166 69
2020/20211.908 127 103 181 211 127 140 133 108 125 236 79 338
2021/20221.384 34 130 281 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20251.498 190 409 196 149 269 207 78 0 0 0 0 0
Totale 17.379