Bicocca Open Archive

Logo unimib boa
GRILLI, EMANUELE ENRICO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 10.723
EU - Europa 5.051
AS - Asia 2.211
SA - Sud America 86
AF - Africa 22
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 4
Totale 18.105
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 10.550
DE - Germania 884
SE - Svezia 857
SG - Singapore 791
CN - Cina 728
RU - Federazione Russa 701
IE - Irlanda 622
UA - Ucraina 564
IT - Italia 486
GB - Regno Unito 367
HK - Hong Kong 244
VN - Vietnam 237
CA - Canada 165
FI - Finlandia 150
AT - Austria 134
FR - Francia 95
IN - India 91
BR - Brasile 70
NL - Olanda 55
DK - Danimarca 39
BE - Belgio 35
JP - Giappone 27
TR - Turchia 24
PL - Polonia 19
IR - Iran 11
ID - Indonesia 8
KR - Corea 8
TW - Taiwan 8
MA - Marocco 7
CH - Svizzera 6
IQ - Iraq 6
AR - Argentina 5
AU - Australia 5
LV - Lettonia 5
ZA - Sudafrica 5
LT - Lituania 4
MU - Mauritius 4
PE - Perù 4
RO - Romania 4
BG - Bulgaria 3
CL - Cile 3
CZ - Repubblica Ceca 3
EG - Egitto 3
HR - Croazia 3
HU - Ungheria 3
MY - Malesia 3
NZ - Nuova Zelanda 3
PA - Panama 3
PH - Filippine 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
CO - Colombia 2
ES - Italia 2
EU - Europa 2
GR - Grecia 2
IL - Israele 2
JM - Giamaica 2
KZ - Kazakistan 2
LU - Lussemburgo 2
MX - Messico 2
NP - Nepal 2
PK - Pakistan 2
SA - Arabia Saudita 2
TH - Thailandia 2
TN - Tunisia 2
UZ - Uzbekistan 2
AM - Armenia 1
BD - Bangladesh 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
EC - Ecuador 1
EE - Estonia 1
KE - Kenya 1
LK - Sri Lanka 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
OM - Oman 1
PT - Portogallo 1
RS - Serbia 1
UY - Uruguay 1
Totale 18.105
Salva come PNG Salva come JPEG
Città #
Ann Arbor 1.496
Woodbridge 1.305
Fairfield 947
Chandler 845
Houston 737
Jacksonville 658
Dublin 602
Ashburn 580
Singapore 544
Frankfurt am Main 470
Seattle 370
Cambridge 363
Wilmington 360
Dearborn 346
Santa Clara 341
New York 312
Hong Kong 240
Princeton 228
Milan 150
Nanjing 149
Dong Ket 139
Shanghai 131
Vienna 129
Lachine 108
Lawrence 88
Beijing 83
Altamura 82
Council Bluffs 78
Boardman 76
Andover 59
San Diego 50
Southend 48
Nanchang 46
Shenyang 38
Helsinki 36
Brussels 35
Guangzhou 35
Hebei 35
Philadelphia 35
Toronto 32
Huizen 30
Jinan 29
Falls Church 27
Moscow 27
Changsha 25
Norwalk 25
Jiaxing 24
Los Angeles 24
Mountain View 24
London 21
Nürnberg 18
Tianjin 18
Ottawa 17
Kraków 16
Hangzhou 14
Kunming 14
Düsseldorf 13
Munich 13
Fremont 11
San Mateo 11
Auburn Hills 10
Redmond 10
Hefei 9
Zhengzhou 9
São Paulo 8
Washington 8
Dallas 7
Edmonton 7
Orsay 7
Ningbo 6
Portsmouth 6
Pune 6
Rome 6
Taipei 6
Tokyo 6
Tétouan 6
University Park 6
Amsterdam 5
Chicago 5
Hanoi 5
Hounslow 5
Jakarta 5
Kilburn 5
Lanzhou 5
Nuremberg 5
Rho 5
Riga 5
Zurich 5
Acton 4
Berlin 4
Cremona 4
Lauterbourg 4
Leawood 4
Lima region 4
Loreto 4
Phoenix 4
Taizhou 4
Tappahannock 4
The Dalles 4
Wuhan 4
Totale 13.033
Salva come PNG Salva come JPEG
Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 321
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 234
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 229
Optical spin injection and spin lifetime in Ge heterostructures 225
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 224
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 218
Optical spin injection and spin lifetime in Ge heterostructures 218
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 217
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 216
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 214
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 212
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 210
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 208
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 206
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 200
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 200
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 197
Long-lived conduction electron spins in Ge quantum wells 192
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 191
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 189
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 188
Characterization Studies of Purified HgI2 Precursors 187
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 187
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 186
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 185
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 184
Raman Spectroscopy of Si1-xGex Epilayers 183
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 183
Phonon strain shift coefficients in SixGe1-x alloys 180
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 180
Optical spin injection in SiGe heterostructures 177
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 177
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 176
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 176
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 176
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 176
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 175
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 175
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 174
Direct gap related optical transitions in Ge/SiGe quantum wells 173
Thermal tunability of monolithic polymer microcavities 172
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 171
Emission lineshape in strain free quantum dot 170
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 170
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 169
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 169
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 168
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 168
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 168
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 167
Valley-dependent spin polarization and long-lived electron spins in germanium 166
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 160
Raman efficiency in SiGe alloys 160
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 160
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 159
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 159
Structural investigations of the α12 Si-Ge superstructure 159
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 157
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 157
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 156
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 154
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 154
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 153
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 153
Ge Crystals on Si Show Their Light 153
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 153
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 152
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 152
InAs quantum dots grown on nonconventionally oriented GaAs substrates 152
Optical spin orientation in SiGe heterostructures 152
Determination of Raman Efficiency in SiGe Alloys 151
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 150
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 148
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 148
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 147
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 146
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 146
Dislocation recombination and surface passivation of Ge micro-crystals on Si 146
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 143
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 143
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 142
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 141
Spin-resolved study of direct band-gap recombination in bulk Ge 141
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 140
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 139
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 139
3D island nucleation behaviour on high index substrates 138
Photoluminescence circular dichroism and spin polarization in Germanium 136
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 135
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 135
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 134
Robust optical orientation of spins in Ge/SiGe quantum wells 134
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 132
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 132
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 131
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 129
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 126
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 124
Strain-induced shift of phonon modes in Si1-xGex alloys 122
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 122
Totale 16.872
Salva come PNG Salva come JPEG
Categoria #
all - tutte 63.275
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 63.275
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020407 0 0 0 0 0 0 0 0 0 172 166 69
2020/20211.908 127 103 181 211 127 140 133 108 125 236 79 338
2021/20221.384 34 130 281 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20252.556 190 409 196 149 269 207 103 227 268 538 0 0
Totale 18.437