We present a detailed analysis of the Ga coverage and of the post-growth annealing effects on the optical properties of verv-low-density self-assembled GaAs/AlGaAs quantum dots grown by modified droplet epitaxy. Through theoretical calculation of the QD electronic states, including thermally activated Al-Ga interdiffusion processes, we were able to relate our spectroscopic observations to QD structural properties. (C) 2003 Elsevier B.V. All rights reserved.
Mantovani, V., Sanguinetti, S., Guzzi, M., Grilli, E., Gurioli, M., Watanabe, K., et al. (2004). Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 23(03-apr), 377-383 [10.1016/j.physe.2003.10.014].
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy
SANGUINETTI, STEFANO;GUZZI, MARIO;GRILLI, EMANUELE ENRICO;
2004
Abstract
We present a detailed analysis of the Ga coverage and of the post-growth annealing effects on the optical properties of verv-low-density self-assembled GaAs/AlGaAs quantum dots grown by modified droplet epitaxy. Through theoretical calculation of the QD electronic states, including thermally activated Al-Ga interdiffusion processes, we were able to relate our spectroscopic observations to QD structural properties. (C) 2003 Elsevier B.V. All rights reserved.
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