We report on the molecular beam epitaxy growth of InAs self-assembled quantum dots on (N 1 1)A/B GaAs substrates, where N ranges from 2 to 5. For each substrate we prepared three different InAs coverages (from ≈ 1.0 × 1015 to ≈ 1.5 × 1015 InAs molecules cm-2), with growth parameters optimised for self assembly on the (1 0 0) surface. At 2 K, all the samples show photoluminescence of evident quantum dot origin with an efficiency comparable to that of samples grown on (1 0 0)GaAs substrates. Photoluminescence spectra show inhomogeneously broadened, structured peaks in the 1.1-1.4 eV range. Full optical characterisation is reported. © 1998 Elsevier Science B.V. All rights reserved.
Fortina, S., Sanguinetti, S., Grilli, E., Guzzi, M., Henini, M., Polimeni, A., et al. (1998). InAs quantum dots grown on nonconventionally oriented GaAs substrates. JOURNAL OF CRYSTAL GROWTH, 187(1), 126-132 [10.1016/S0022-0248(97)00848-8].
InAs quantum dots grown on nonconventionally oriented GaAs substrates
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1998
Abstract
We report on the molecular beam epitaxy growth of InAs self-assembled quantum dots on (N 1 1)A/B GaAs substrates, where N ranges from 2 to 5. For each substrate we prepared three different InAs coverages (from ≈ 1.0 × 1015 to ≈ 1.5 × 1015 InAs molecules cm-2), with growth parameters optimised for self assembly on the (1 0 0) surface. At 2 K, all the samples show photoluminescence of evident quantum dot origin with an efficiency comparable to that of samples grown on (1 0 0)GaAs substrates. Photoluminescence spectra show inhomogeneously broadened, structured peaks in the 1.1-1.4 eV range. Full optical characterisation is reported. © 1998 Elsevier Science B.V. All rights reserved.
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