We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1−xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1−xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1−xGex/Si interface.

Bonera, E., Gatti, R., Isella, G., Norga, G., Picco, A., Grilli, E., et al. (2013). Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor. APPLIED PHYSICS LETTERS, 103(5), 053104-053107 [10.1063/1.4817071].

Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

BONERA, EMILIANO;GATTI, RICCARDO;PICCO, ANDREA;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;MIGLIO, LEONIDA
2013

Abstract

We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1−xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1−xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1−xGex/Si interface.
Articolo in rivista - Articolo scientifico
dislocation density, finite element analysis, Ge-Si alloys, interface structure, plastic deformation, Raman spectra, semiconductor epitaxial layers, silicon-on-insulator, transmission electron microscopy
English
2013
103
5
053104
053107
none
Bonera, E., Gatti, R., Isella, G., Norga, G., Picco, A., Grilli, E., et al. (2013). Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor. APPLIED PHYSICS LETTERS, 103(5), 053104-053107 [10.1063/1.4817071].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/46050
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