We present a detailed study of the temperature dependence of the single quantum dot emission lineshape in strain free, GaAs/AlGaAs quantum dots. In particular, we analyze the emission lineshape in terms of linewidth, peak energy and sidebands. These quantities are all connected with the nature of the electron-phonon interaction. We conclude that the line broadening in quantum dots is due to pure dephasing processes driven by GaAs-LO phonons. In addition, there is a lack of quantum size effect on the excitonic energy renormalization with the temperature. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Poliani, E., Bonfanti, M., Sanguinetti, S., Grilli, E., Guzzi, M., Gurioli, M., et al. (2006). Emission lineshape in strain free quantum dot. PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS, 3(11), 3819-3822 [10.1002/pssc.200671542].
Emission lineshape in strain free quantum dot
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2006
Abstract
We present a detailed study of the temperature dependence of the single quantum dot emission lineshape in strain free, GaAs/AlGaAs quantum dots. In particular, we analyze the emission lineshape in terms of linewidth, peak energy and sidebands. These quantities are all connected with the nature of the electron-phonon interaction. We conclude that the line broadening in quantum dots is due to pure dephasing processes driven by GaAs-LO phonons. In addition, there is a lack of quantum size effect on the excitonic energy renormalization with the temperature. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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