We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and In GaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands. Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed. (C) 2000 Elsevier Science Ltd.
Chiantoni, G., Miotto, A., Henini, M., Polimeni, A., Patane, A., Eaves, L., et al. (2000). Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case. MICRON, 31(3), 309-313 [10.1016/S0968-4328(99)00098-0].
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO
2000
Abstract
We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and In GaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands. Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed. (C) 2000 Elsevier Science Ltd.
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