We present photoluminescence (PL) and spin polarized photo-emission (SPPE) measurements performed on bulk Ge, and Ge/Si(100) epilayers. A set of bi-axially strained Ge epilayers featuring different strain levels has been deposited by low energy plasma enhanced CVD (LEPECVD) and characterized by high resolution X-ray diffraction (HR-XRD). SPPE data indicate that compressive strain effectively lifts the heavy holes - light holes degeneracy raising the polarization of injected electrons above the P=50% limit of bulk material. Circularly polarized light PL measurements performed on p-type bulk crystals confirm the suitability of Ge for spintronics application showing a robust electron spin inizialization at the direct gap of Ge and giving a lower bound value for the spin relaxation time of ? 230 fs. © 2011 SPIE.
Isella, G., Bottegoni, F., Pezzoli, F., Cecchi, S., Gatti, E., Chrastina, D., et al. (2011). Optical spin injection in SiGe heterostructures. In H.M. Drouhin, J. Wegrowe, M. Razeghi (a cura di), Proceedings SPIE 8100, Spintronics IV, 810007 (September 15, 2011). S P I E - International Society for Optical Engineering [10.1117/12.892749].
Optical spin injection in SiGe heterostructures
PEZZOLI, FABIO;Cecchi, S;GATTI, ELEONORA;GRILLI, EMANUELE ENRICO;GUZZI, MARIOPenultimo
;
2011
Abstract
We present photoluminescence (PL) and spin polarized photo-emission (SPPE) measurements performed on bulk Ge, and Ge/Si(100) epilayers. A set of bi-axially strained Ge epilayers featuring different strain levels has been deposited by low energy plasma enhanced CVD (LEPECVD) and characterized by high resolution X-ray diffraction (HR-XRD). SPPE data indicate that compressive strain effectively lifts the heavy holes - light holes degeneracy raising the polarization of injected electrons above the P=50% limit of bulk material. Circularly polarized light PL measurements performed on p-type bulk crystals confirm the suitability of Ge for spintronics application showing a robust electron spin inizialization at the direct gap of Ge and giving a lower bound value for the spin relaxation time of ? 230 fs. © 2011 SPIE.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
