Bicocca Open Archive

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MARZEGALLI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 7.031
EU - Europa 4.073
AS - Asia 1.971
SA - Sud America 78
AF - Africa 35
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 13.197
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Nazione #
US - Stati Uniti d'America 6.930
IT - Italia 848
DE - Germania 776
SG - Singapore 701
RU - Federazione Russa 609
SE - Svezia 555
CN - Cina 546
IE - Irlanda 351
HK - Hong Kong 305
UA - Ucraina 257
GB - Regno Unito 221
VN - Vietnam 166
AT - Austria 94
CA - Canada 94
FR - Francia 78
ES - Italia 73
FI - Finlandia 71
BR - Brasile 70
ID - Indonesia 62
IN - India 56
JP - Giappone 53
DK - Danimarca 42
TR - Turchia 29
NL - Olanda 26
BE - Belgio 19
CH - Svizzera 18
KR - Corea 13
MA - Marocco 13
ZA - Sudafrica 11
PK - Pakistan 7
CZ - Repubblica Ceca 6
CI - Costa d'Avorio 5
NO - Norvegia 5
AR - Argentina 4
AU - Australia 4
IR - Iran 4
MX - Messico 4
PH - Filippine 4
PL - Polonia 4
BG - Bulgaria 3
GR - Grecia 3
IL - Israele 3
LV - Lettonia 3
PE - Perù 3
SA - Arabia Saudita 3
SI - Slovenia 3
TW - Taiwan 3
AZ - Azerbaigian 2
BD - Bangladesh 2
EU - Europa 2
LA - Repubblica Popolare Democratica del Laos 2
MU - Mauritius 2
RO - Romania 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BZ - Belize 1
EE - Estonia 1
GA - Gabon 1
GE - Georgia 1
HU - Ungheria 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KW - Kuwait 1
KZ - Kazakistan 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MD - Moldavia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
OM - Oman 1
PA - Panama 1
PT - Portogallo 1
SC - Seychelles 1
TN - Tunisia 1
UZ - Uzbekistan 1
VE - Venezuela 1
Totale 13.197
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Città #
Ann Arbor 1.839
Woodbridge 631
Frankfurt am Main 576
Fairfield 501
Singapore 499
Chandler 491
Dublin 335
Houston 329
Milan 325
Hong Kong 300
Ashburn 291
Wilmington 291
Jacksonville 272
Santa Clara 220
Dearborn 181
Seattle 176
Cambridge 164
Princeton 153
New York 151
Dong Ket 92
Guangzhou 91
Nanjing 86
Vienna 77
Jakarta 59
Shanghai 56
Altamura 55
Lawrence 54
Southend 43
Beijing 41
Lachine 40
Council Bluffs 38
San Diego 36
Los Angeles 35
Moscow 35
Nanchang 33
Andover 27
Boardman 27
Shenyang 25
Miyamae Ku 23
Monza 23
Helsinki 20
Paris 20
Como 19
Toronto 19
Valladolid 19
Hebei 18
Pune 18
Tianjin 17
Umeda 17
Jinan 16
Sacramento 16
Vigano San Martino 16
Chicago 15
Dalmine 15
Ottawa 15
Zhengzhou 15
Jiaxing 14
Ningbo 14
Redmond 14
Taizhou 14
Brussels 13
London 13
Nuremberg 13
Norwalk 12
Turin 12
Berlin 11
Kunming 11
São Paulo 11
Ardea 10
Dallas 10
Falls Church 10
Arcore 9
Changsha 9
Fremont 9
Malmö 9
Mountain View 9
Munich 9
Rome 9
Spirano 9
Brescia 8
Dresden 8
Hangzhou 8
Cinisello Balsamo 7
Edmonton 7
Fornovo San Giovanni 7
Parma 7
Casablanca 6
College Station 6
Grafing 6
Huizen 6
Kitchener 6
Lanzhou 6
Lappeenranta 6
Oxford 6
Portsmouth 6
Abidjan 5
Auburn Hills 5
Bergamo 5
Calcio 5
Calusco d'Adda 5
Totale 9.381
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 318
In-plane selective area InSb–Al nanowire quantum networks 301
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 254
Dynamics of crosshatch patterns in heteroepitaxy 246
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 242
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 237
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 236
"Divide et impera" in detector technology 235
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 232
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 232
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 232
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 227
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 225
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 216
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 206
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 206
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 205
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 203
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 199
Integration of MOSFETs with SiGe dots as stressor material 197
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 197
3D heteroepitaxy of mismatched semiconductors on silicon 194
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 190
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 189
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 186
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 185
Optical properties of shuffle dislocations in silicon 183
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 178
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 176
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 172
Perfect crystals grown from imperfect interfaces 172
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 170
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 168
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 167
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 165
Strained MOSFETs on ordered SiGe dots 165
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 163
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 163
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 162
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 162
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 160
Hexagonal Diamond phase of Si and Ge by nanoindentation 156
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 156
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 154
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 153
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 149
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 147
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 144
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 143
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 143
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 142
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 140
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 139
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 137
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 136
Fully coherent growth of Ge on free-standing Si(001) nanomesas 136
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 136
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 135
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 134
Hexagonal Si and Ge polytypes for silicon photonics 132
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 131
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 130
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 126
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 125
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 122
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 121
Epitaxial Ge-crystal arrays for X-ray detection 116
Dynamics of cross-hatch evolution in heteroepitaxy 113
New approaches and understandings in the growth of cubic silicon carbide 113
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 102
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 101
Stress engineering of boron doped diamond thin films via micro-fabrication 96
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 96
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 94
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 93
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 91
Unveiling Planar Defects in Hexagonal Group IV Materials 91
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 87
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 86
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 81
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 80
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 76
3C-SiC epitaxy on deeply patterned Si(111) substrates 71
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 63
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 56
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 49
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 47
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 45
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy 39
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 38
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 32
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale 29
Totale 13.768
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Categoria #
all - tutte 47.046
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 47.046
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020293 0 0 0 0 0 0 0 0 0 124 134 35
2020/20211.836 70 60 165 171 112 144 138 162 173 186 141 314
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.232 250 592 239 254 120 277 28 128 153 42 80 69
2023/20241.393 59 81 41 45 187 333 229 64 140 42 43 129
2024/20252.688 153 429 226 221 298 178 149 181 333 520 0 0
Totale 13.768