The growth morphology of epitaxial 3C-SiC crystals grown on hexagonal pillars deeply etched into Si(111) substrates is presented. Different growth velocities of side facets let the top crystal facet evolve from hexagonal towards triangular shape during growth. The lateral size and separation between Si pillars determine the onset of fusion between neighboring crystals during growth at a height tailoring of which is crucial to reduce the stacking fault (SF) density of the coalesced surface. A density of 3400 cm-1 was observed for a coalesced surface, compared to 8100 cm-1 for layers grown on unpatterned area. Intermediate partial fusion of neighboring crystals is shown as well as a surface of fully coalesced crystals.
Kreiliger, T., Mauceri, M., Puglisi, M., Mancarella, F., La Via, F., Crippa, D., et al. (2016). 3C-SiC epitaxy on deeply patterned Si(111) substrates. In Materials Science Forum (pp.151-154). Trans Tech Publications Ltd [10.4028/www.scientific.net/MSF.858.151].
3C-SiC epitaxy on deeply patterned Si(111) substrates
Marzegalli A.;Miglio L.;
2016
Abstract
The growth morphology of epitaxial 3C-SiC crystals grown on hexagonal pillars deeply etched into Si(111) substrates is presented. Different growth velocities of side facets let the top crystal facet evolve from hexagonal towards triangular shape during growth. The lateral size and separation between Si pillars determine the onset of fusion between neighboring crystals during growth at a height tailoring of which is crucial to reduce the stacking fault (SF) density of the coalesced surface. A density of 3400 cm-1 was observed for a coalesced surface, compared to 8100 cm-1 for layers grown on unpatterned area. Intermediate partial fusion of neighboring crystals is shown as well as a surface of fully coalesced crystals.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
