Experimental assessment of the strain tensor within a microstructure is challenging, especially for small mechanical deformations acting over submicron length scales. In this work, we fully characterize the spatial strain distribution within a suspended micro-disk laser made of Ge1-xSnx alloy, with fine resolution <200 nm. We employ Scanning X-ray Diffraction Microscopy, a model-free method based on synchrotron radiation, to directly obtain maps of all components of lattice strain and rotation, including the shear strains, finding them on a magnitude ~10-3. We correlate these small elastic deformations to structural defects and the relaxation of the three-dimensional microstructure, demonstrating the potential of an advanced X-ray microscopy technique for microelectronics.
Corley-Wiciak, C., Zöllner, M., Corley-Wiciak, A., Rovaris, F., Sfruncia, G., Nicotra, G., et al. (2024). The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale. ECS TRANSACTIONS, 114(2), 145-153 [10.1149/11402.0145ecst].
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
Rovaris, Fabrizio;Marzegalli, Anna;Montalenti, Francesco;
2024
Abstract
Experimental assessment of the strain tensor within a microstructure is challenging, especially for small mechanical deformations acting over submicron length scales. In this work, we fully characterize the spatial strain distribution within a suspended micro-disk laser made of Ge1-xSnx alloy, with fine resolution <200 nm. We employ Scanning X-ray Diffraction Microscopy, a model-free method based on synchrotron radiation, to directly obtain maps of all components of lattice strain and rotation, including the shear strains, finding them on a magnitude ~10-3. We correlate these small elastic deformations to structural defects and the relaxation of the three-dimensional microstructure, demonstrating the potential of an advanced X-ray microscopy technique for microelectronics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.