An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts

Marzegalli, A., Isa, F., Groiss, H., Muller, E., Falub, C., Taboada, A., et al. (2013). Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning. ADVANCED MATERIALS, 25(32), 4408-4412 [10.1002/adma.201300550].

Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning

MARZEGALLI, ANNA
;
MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA
2013

Abstract

An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts
Articolo in rivista - Articolo scientifico
Ge; dislocations; heteroepitaxy; patterning; semiconductors;
English
2013
25
32
4408
4412
none
Marzegalli, A., Isa, F., Groiss, H., Muller, E., Falub, C., Taboada, A., et al. (2013). Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning. ADVANCED MATERIALS, 25(32), 4408-4412 [10.1002/adma.201300550].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/46368
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