Molecular dynamics simulations with the Tersoff potential of the strain distribution around 60degrees misfit dislocation in a heteroepitaxial SiGe film confirm that highly compressed and expanded, cylindrical nanometer-sized regions appear on opposite sides of the (111) glide plane. Such a configuration is suggested to generate opposite chemical potential gradients for Si and Ge diffusion and, as verified by a Monte Carlo simulation, in the formation of Si-rich and Ge-rich nanowires along the dislocation core. This model is supported by photoluminescence measurements as a function of annealing temperature and time. (C) 2004 American Institute of Physics.
Martinelli, L., Marzegalli, A., Raiteri, P., Bollani, M., Montalenti, F., Miglio, L., et al. (2004). Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data. APPLIED PHYSICS LETTERS, 84(15), 2895-2897 [10.1063/1.1705727].
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data
MARZEGALLI, ANNA;MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA;
2004
Abstract
Molecular dynamics simulations with the Tersoff potential of the strain distribution around 60degrees misfit dislocation in a heteroepitaxial SiGe film confirm that highly compressed and expanded, cylindrical nanometer-sized regions appear on opposite sides of the (111) glide plane. Such a configuration is suggested to generate opposite chemical potential gradients for Si and Ge diffusion and, as verified by a Monte Carlo simulation, in the formation of Si-rich and Ge-rich nanowires along the dislocation core. This model is supported by photoluminescence measurements as a function of annealing temperature and time. (C) 2004 American Institute of Physics.
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