In the quest for a Ge x-ray detector mono-lithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks. It consists of replacing the conventional continuous layers by space-filling arrays of strain- and defect-free Ge crystals, the width, height and shape of which are controlled by tuning epitaxial growth onto micrometer-sized features deeply etched into Si-substrates. Heterojunctions formed between the Ge-crystals and the Si-substrate exhibit the required rectifying diode behavior with low dark currents (<1 mA/cm2).
Falub, C., Kreiliger, T., Taboada, A., Isa, F., Chrastina, D., Isella, G., et al. (2012). Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon. In Proceedings of the International Semiconductor Conference (pp.45-50). IEEE [10.1109/SMICND.2012.6400698].
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon
BERGAMASCHINI, ROBERTO;MARZEGALLI, ANNA;BONERA, EMILIANO;PEZZOLI, FABIO;MIGLIO, LEONIDA;
2012
Abstract
In the quest for a Ge x-ray detector mono-lithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks. It consists of replacing the conventional continuous layers by space-filling arrays of strain- and defect-free Ge crystals, the width, height and shape of which are controlled by tuning epitaxial growth onto micrometer-sized features deeply etched into Si-substrates. Heterojunctions formed between the Ge-crystals and the Si-substrate exhibit the required rectifying diode behavior with low dark currents (<1 mA/cm2).
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