MIGLIO, LEONIDA
 Distribuzione geografica
Continente #
NA - Nord America 27.903
EU - Europa 12.447
AS - Asia 6.762
SA - Sud America 265
AF - Africa 51
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 13
Totale 47.463
Nazione #
US - Stati Uniti d'America 27.453
SG - Singapore 2.147
DE - Germania 1.964
CN - Cina 1.937
RU - Federazione Russa 1.913
SE - Svezia 1.866
IT - Italia 1.823
UA - Ucraina 1.481
IE - Irlanda 1.397
HK - Hong Kong 1.229
VN - Vietnam 784
GB - Regno Unito 611
CA - Canada 435
FI - Finlandia 416
FR - Francia 225
BR - Brasile 223
AT - Austria 191
IN - India 162
NL - Olanda 144
JP - Giappone 119
TR - Turchia 114
ES - Italia 111
ID - Indonesia 108
DK - Danimarca 84
BE - Belgio 61
CH - Svizzera 52
PK - Pakistan 26
KR - Corea 25
TW - Taiwan 21
AU - Australia 17
GR - Grecia 17
ZA - Sudafrica 17
CZ - Repubblica Ceca 16
PL - Polonia 16
MA - Marocco 15
AR - Argentina 13
BD - Bangladesh 13
EU - Europa 12
IR - Iran 12
CL - Cile 11
IL - Israele 10
BG - Bulgaria 8
MX - Messico 8
UZ - Uzbekistan 8
HU - Ungheria 7
RO - Romania 7
LV - Lettonia 6
NO - Norvegia 6
KG - Kirghizistan 5
LT - Lituania 5
NZ - Nuova Zelanda 5
SA - Arabia Saudita 5
VE - Venezuela 5
AZ - Azerbaigian 4
CO - Colombia 4
IQ - Iraq 4
LA - Repubblica Popolare Democratica del Laos 4
LU - Lussemburgo 4
PE - Perù 4
PT - Portogallo 4
TN - Tunisia 4
CI - Costa d'Avorio 3
EC - Ecuador 3
JM - Giamaica 3
LK - Sri Lanka 3
PH - Filippine 3
AE - Emirati Arabi Uniti 2
BY - Bielorussia 2
EE - Estonia 2
EG - Egitto 2
GE - Georgia 2
KZ - Kazakistan 2
MU - Mauritius 2
NG - Nigeria 2
PS - Palestinian Territory 2
PY - Paraguay 2
RS - Serbia 2
SC - Seychelles 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BZ - Belize 1
CG - Congo 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
GA - Gabon 1
GW - Guinea-Bissau 1
HR - Croazia 1
IS - Islanda 1
JO - Giordania 1
KW - Kuwait 1
LB - Libano 1
MD - Moldavia 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
MY - Malesia 1
Totale 47.459
Città #
Ann Arbor 5.649
Woodbridge 3.079
Fairfield 2.349
Houston 2.046
Jacksonville 1.592
Chandler 1.545
Singapore 1.489
Dublin 1.354
Frankfurt am Main 1.338
Ashburn 1.302
Hong Kong 1.208
Wilmington 1.010
Santa Clara 934
Seattle 905
Dearborn 816
Cambridge 757
Milan 686
Princeton 667
New York 569
Dong Ket 410
Nanjing 363
Lachine 261
Altamura 260
Beijing 258
Lawrence 245
Shanghai 182
San Diego 167
Vienna 166
Council Bluffs 162
Guangzhou 140
Boardman 135
Helsinki 129
Nanchang 128
Moscow 119
Andover 112
Toronto 107
Shenyang 105
Jakarta 101
Hebei 86
Huizen 69
Falls Church 67
Jinan 67
Jiaxing 65
Changsha 64
Norwalk 61
Tianjin 59
Los Angeles 49
Brussels 48
Dresden 47
Zhengzhou 46
Hangzhou 45
Ottawa 45
Southend 43
Mountain View 40
London 37
Sacramento 35
Ningbo 34
Redmond 34
Chicago 31
Dallas 31
University Park 31
Monza 29
Kunming 28
Miyamae Ku 28
Philadelphia 28
Taizhou 28
Hefei 27
Pune 26
Kocaeli 25
Turin 25
Nuremberg 24
Phoenix 24
São Paulo 24
Rome 23
Berlin 22
Paris 21
Fremont 20
Ardea 18
Columbus 18
Lausanne 17
Umeda 17
Auburn Hills 16
Düsseldorf 16
Vigano San Martino 16
Brescia 15
San Mateo 15
Arcore 14
Falkenstein 14
Grafing 14
Amsterdam 13
Como 13
Lanzhou 13
Valladolid 13
Cinisello Balsamo 12
Nürnberg 12
Tokyo 12
Washington 12
Bologna 11
Dalmine 11
Islamabad 11
Totale 34.704
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 355
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 344
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 338
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 333
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 318
In-plane selective area InSb–Al nanowire quantum networks 301
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 289
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 267
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 258
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 254
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 246
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 242
Dislocation-free SiGe/Si heterostructures 238
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 237
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 236
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 235
"Divide et impera" in detector technology 235
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 233
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 233
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 232
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 227
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 225
Strain engineering in Ge/GeSn core/shell nanowires 222
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 220
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 217
A Structural Characterization of GaAs MBE Grown on Si Pillars 209
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 209
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 207
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 206
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 205
Photonic Properties of Self-Assembled Semiconductor Microstructures 200
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 199
Integration of MOSFETs with SiGe dots as stressor material 198
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se2 thin film solar cells 197
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 197
Localized surface optical phonons in a layered crystal - gase(001) 196
3D heteroepitaxy of mismatched semiconductors on silicon 194
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 192
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 190
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 190
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 189
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 188
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 188
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 188
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 188
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 186
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 186
Dispersion relations of surface phonons in LiF(001) and NaF(001) 186
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se(2) thin film solar cells 185
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 185
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 185
Microscopic environment of Fe in epitaxially stabilized c-FeSi 184
Spontaneous Ge island ordering promoted by partial silicon capping 183
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 183
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 182
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration 181
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film 180
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 180
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 178
The role of ionic quadrupolar deformation in atom surface-potential 177
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 176
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 176
Observation of surface optical phonons in naf(001) by inelastic he-atom scattering 176
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 176
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 175
Surface energies and surface relaxation at TiSi2 competing phases 175
Inelastic-Scattering of Helium From Bulk Longitudinal Acoustic Phonons in LiF(001) 175
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 174
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 174
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 174
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 174
Self-ordering of a Ge island single layer induced by Si overgrowth 173
2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics 173
Estimation of the critical radius for the nucleation of the c54 phase in c49 tisi2 role of the difference in density 173
Surface green-function matching approach to the surface dynamics of ionic-crystals .1. equivalence with the invariant green-function method 173
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 173
Perfect crystals grown from imperfect interfaces 172
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 172
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 171
Green's function calculation of surface phonons in ionic crystals 171
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 171
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 170
Modelling the kinetic growth mode of GaAs nanomembranes 169
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 168
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 167
New epitaxially stabilized cosi phase with the cscl structure 167
Some remarks on the Green's function calculation of electronic states at solid surfaces 167
Strained MOSFETs on ordered SiGe dots 166
Prediction of a very hard triclinic form of diamond 166
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 166
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 165
Study of surface phonons by means of the Green's Function Method 165
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 165
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 164
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 163
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 163
LATTICE-DYNAMICS OF THE SI(111) SURFACE - FOLDING EFFECTS IN THE 2X1 STRUCTURE 162
Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates 162
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 162
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 162
Totale 19.992
Categoria #
all - tutte 165.813
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 165.813


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.041 0 0 0 0 0 0 0 0 0 380 510 151
2020/20216.265 372 249 570 637 363 386 500 425 517 715 340 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20244.291 152 165 229 129 634 1.020 790 156 458 57 83 418
2024/20257.812 648 1.353 561 501 819 569 403 473 1.137 1.348 0 0
Totale 48.542