Electromodulation of SiH and SiOH vibrational bands at a hydrogen-implanted SiSiO2 interface in a multiple-internal-reflectance configuration is reported. Dipole stregthening and Stark shifts are calculated and theoretical lineshapes derived from their combinations are compared with the experimental electromodulation curves.
Stella, A., Miglio, L., Palik, E., Holm, R., Hughes, H. (1983). Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration. PHYSICA. B + C, 117-118(Part 2), 777-778 [10.1016/0378-4363(83)90649-6].
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration
Miglio, L;
1983
Abstract
Electromodulation of SiH and SiOH vibrational bands at a hydrogen-implanted SiSiO2 interface in a multiple-internal-reflectance configuration is reported. Dipole stregthening and Stark shifts are calculated and theoretical lineshapes derived from their combinations are compared with the experimental electromodulation curves.
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