Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 17.302
EU - Europa 8.043
AS - Asia 3.544
Continente sconosciuto - Info sul continente non disponibili 27
AF - Africa 19
OC - Oceania 10
SA - Sud America 9
Totale 28.954
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Nazione #
US - Stati Uniti d'America 17.034
IT - Italia 1.550
DE - Germania 1.514
SE - Svezia 1.269
CN - Cina 1.215
SG - Singapore 1.056
IE - Irlanda 867
UA - Ucraina 757
RU - Federazione Russa 713
GB - Regno Unito 473
VN - Vietnam 425
HK - Hong Kong 387
CA - Canada 266
FI - Finlandia 201
ES - Italia 146
AT - Austria 133
IN - India 131
FR - Francia 126
ID - Indonesia 88
TR - Turchia 83
NL - Olanda 76
DK - Danimarca 69
BE - Belgio 53
JP - Giappone 47
CH - Svizzera 36
KR - Corea 34
EU - Europa 23
PK - Pakistan 17
TW - Taiwan 16
PL - Polonia 14
BD - Bangladesh 12
IR - Iran 11
AU - Australia 10
RO - Romania 10
BG - Bulgaria 7
CI - Costa d'Avorio 7
CZ - Repubblica Ceca 7
BR - Brasile 6
IL - Israele 6
NO - Norvegia 6
GR - Grecia 4
HU - Ungheria 4
PH - Filippine 4
SA - Arabia Saudita 4
A2 - ???statistics.table.value.countryCode.A2??? 3
LK - Sri Lanka 3
MU - Mauritius 3
CL - Cile 2
EE - Estonia 2
MA - Marocco 2
SC - Seychelles 2
A1 - Anonimo 1
AZ - Azerbaigian 1
BZ - Belize 1
EC - Ecuador 1
EG - Egitto 1
GE - Georgia 1
GW - Guinea-Bissau 1
HR - Croazia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MD - Moldavia 1
ME - Montenegro 1
MX - Messico 1
NG - Nigeria 1
PT - Portogallo 1
RS - Serbia 1
TN - Tunisia 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 28.954
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Città #
Ann Arbor 4.395
Woodbridge 1.560
Fairfield 1.242
Chandler 1.191
Frankfurt am Main 1.177
Houston 1.152
Singapore 907
Jacksonville 857
Dublin 820
Ashburn 715
Wilmington 675
Milan 612
Dearborn 554
Santa Clara 554
Seattle 472
Princeton 414
New York 395
Cambridge 380
Hong Kong 366
Dong Ket 254
Nanjing 222
Altamura 169
Shanghai 164
Lawrence 147
Beijing 136
Lachine 136
Vienna 117
San Diego 89
Jakarta 86
Nanchang 85
Boardman 68
Shenyang 67
Toronto 59
Andover 58
Hebei 55
Dresden 52
Tianjin 47
Helsinki 46
Valladolid 46
Southend 43
Brussels 42
Ottawa 42
Guangzhou 41
Changsha 40
Jinan 40
Turin 39
Falls Church 37
Jiaxing 37
London 37
Chicago 36
Norwalk 36
Pune 33
Huizen 30
Sacramento 30
Los Angeles 29
Mountain View 28
Hangzhou 23
Kunming 22
Phoenix 22
Redmond 21
Rome 21
Zhengzhou 21
Columbus 20
Dallas 20
Monza 19
Taizhou 19
Ardea 18
Como 17
Ningbo 17
Philadelphia 17
Umeda 17
Auburn Hills 16
Fremont 16
Lausanne 16
Torino 14
Grafing 13
Hefei 13
Munich 13
Marburg 12
Miyamae Ku 12
Yuseong-gu 12
Berlin 11
Kocaeli 11
Malmö 11
Sesto Fiorentino 11
Edmonton 10
Lanzhou 10
Taipei 10
Amsterdam 9
Dalmine 9
Madrid 9
Spirano 9
Trezzano sul Naviglio 9
Urgnano 9
Villa Bartolomea 9
Cesano Maderno 8
Frankfurt An Der Oder 8
Grumello del Monte 8
Karlsruhe 8
Paris 8
Totale 21.769
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 346
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 325
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 324
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 316
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 308
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 296
Computational analysis of low-energy dislocation configurations in graded layers 280
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 276
Slip trace-induced terrace erosion 247
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 245
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 239
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 235
Dynamics of crosshatch patterns in heteroepitaxy 233
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 224
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 223
Dislocation-free SiGe/Si heterostructures 222
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 222
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 221
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 215
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 212
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 211
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 210
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 208
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 204
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 196
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 196
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 195
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 194
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 194
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 191
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 189
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 188
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 185
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 185
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 183
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 182
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 178
Dynamics of pit filling in heteroepitaxy via phase-field simulations 178
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 177
Self-assembled GaAs islands on Si by droplet epitaxy 175
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 175
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 174
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 173
Spontaneous Ge island ordering promoted by partial silicon capping 172
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 171
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 170
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 168
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 166
SiGe nano-stressors for Ge strain-engineering 166
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 165
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 165
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 164
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 164
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 164
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 163
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 160
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 160
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 159
Strained MOSFETs on ordered SiGe dots 158
Si/Ge exchange mechanisms at the Ge(105) surface 157
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 157
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 157
Self-ordering of a Ge island single layer induced by Si overgrowth 155
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 155
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 154
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 153
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 153
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 153
Modelling the kinetic growth mode of GaAs nanomembranes 153
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 152
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 151
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 149
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 149
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 147
Cell cycle effects of gemcitabine 147
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 147
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 147
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 147
Continuum modeling of heteroepitaxial growth in semiconductors 144
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 143
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 142
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 141
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 140
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 140
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 140
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 139
Fast isotropic adatom diffusion on Ge(105) dot facets 138
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates 138
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 138
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 138
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 137
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 136
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 136
Competing mechanisms in adatom diffusion on a channeled surface: Jumps versus metastable walks 135
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 134
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 134
Atomistic modeling of step formation and step bunching at the Ge(105) surface 133
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 133
Machine learning potential for interacting dislocations in the presence of free surfaces 132
Ab-initio adiabatic noble gas-metal interaction: the role of the induced polarization charge 131
Totale 18.090
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Categoria #
all - tutte 99.366
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 99.366
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.637 0 0 0 0 0 534 697 303 399 286 326 92
2020/20214.348 206 162 420 438 335 328 346 321 364 456 270 702
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20253.099 386 963 417 371 640 322 0 0 0 0 0 0
Totale 30.026