Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 17.664
EU - Europa 8.650
AS - Asia 4.443
SA - Sud America 141
AF - Africa 41
Continente sconosciuto - Info sul continente non disponibili 27
OC - Oceania 11
Totale 30.977
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Nazione #
US - Stati Uniti d'America 17.382
IT - Italia 1.676
SG - Singapore 1.559
DE - Germania 1.556
SE - Svezia 1.271
CN - Cina 1.235
RU - Federazione Russa 1.051
IE - Irlanda 870
UA - Ucraina 772
HK - Hong Kong 708
GB - Regno Unito 477
VN - Vietnam 425
CA - Canada 269
FI - Finlandia 208
AT - Austria 156
ES - Italia 153
IN - India 135
FR - Francia 129
BR - Brasile 126
ID - Indonesia 90
NL - Olanda 86
TR - Turchia 86
DK - Danimarca 70
BE - Belgio 54
JP - Giappone 47
CH - Svizzera 38
KR - Corea 35
EU - Europa 23
PK - Pakistan 22
TW - Taiwan 20
BD - Bangladesh 15
PL - Polonia 14
IR - Iran 11
ZA - Sudafrica 11
AU - Australia 10
IL - Israele 10
RO - Romania 10
CI - Costa d'Avorio 8
NO - Norvegia 8
BG - Bulgaria 7
CZ - Repubblica Ceca 7
PH - Filippine 7
HU - Ungheria 6
KG - Kirghizistan 6
MA - Marocco 6
MX - Messico 6
GR - Grecia 5
AZ - Azerbaigian 4
EC - Ecuador 4
MU - Mauritius 4
PT - Portogallo 4
SA - Arabia Saudita 4
UZ - Uzbekistan 4
A2 - ???statistics.table.value.countryCode.A2??? 3
CL - Cile 3
EE - Estonia 3
GE - Georgia 3
IQ - Iraq 3
KE - Kenya 3
LK - Sri Lanka 3
LT - Lituania 3
LU - Lussemburgo 3
MD - Moldavia 3
PE - Perù 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AM - Armenia 2
AR - Argentina 2
CO - Colombia 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
EG - Egitto 2
IS - Islanda 2
JO - Giordania 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
SC - Seychelles 2
A1 - Anonimo 1
AO - Angola 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
GW - Guinea-Bissau 1
HR - Croazia 1
JM - Giamaica 1
KW - Kuwait 1
ME - Montenegro 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PA - Panama 1
RS - Serbia 1
TN - Tunisia 1
VE - Venezuela 1
Totale 30.977
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Città #
Ann Arbor 4.395
Woodbridge 1.560
Fairfield 1.242
Chandler 1.191
Frankfurt am Main 1.177
Houston 1.152
Singapore 1.075
Jacksonville 857
Dublin 821
Ashburn 740
Hong Kong 685
Wilmington 675
Milan 667
Santa Clara 555
Dearborn 554
Seattle 473
Princeton 416
New York 395
Cambridge 380
Dong Ket 254
Nanjing 222
Altamura 169
Shanghai 164
Lawrence 147
Beijing 138
Lachine 136
Council Bluffs 127
Vienna 127
San Diego 89
Jakarta 86
Nanchang 85
Boardman 68
Shenyang 67
Moscow 65
Toronto 60
Andover 58
Hebei 55
Dresden 52
Helsinki 51
Valladolid 49
Los Angeles 48
Guangzhou 47
Tianjin 47
Southend 43
Brussels 42
Ottawa 42
Changsha 41
Turin 41
Jinan 40
Falls Church 37
Jiaxing 37
London 37
Chicago 36
Norwalk 36
Pune 33
Huizen 30
Sacramento 30
Mountain View 28
Monza 26
Hangzhou 24
Nuremberg 23
Phoenix 23
Kunming 22
Redmond 21
Rome 21
Zhengzhou 21
Columbus 20
Dallas 20
Taizhou 19
Ardea 18
Como 17
Ningbo 17
Philadelphia 17
Umeda 17
Auburn Hills 16
Fremont 16
Lausanne 16
Torino 14
Dalmine 13
Grafing 13
Hefei 13
Munich 13
São Paulo 13
Marburg 12
Miyamae Ku 12
Yuseong-gu 12
Amsterdam 11
Berlin 11
Kocaeli 11
Malmö 11
Parma 11
Sesto Fiorentino 11
Edmonton 10
Lanzhou 10
Taipei 10
Brescia 9
Madrid 9
Spirano 9
Trezzano sul Naviglio 9
Urgnano 9
Totale 22.604
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 353
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 339
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 335
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 329
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 319
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 314
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 288
Computational analysis of low-energy dislocation configurations in graded layers 286
Slip trace-induced terrace erosion 255
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 254
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 250
Dynamics of crosshatch patterns in heteroepitaxy 245
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 241
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 237
Dislocation-free SiGe/Si heterostructures 236
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 233
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 231
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 231
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 231
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 223
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 222
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 220
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 215
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 212
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 204
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 204
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 202
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 201
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 200
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 197
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 197
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 196
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 195
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 193
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 189
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 188
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 186
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 185
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 185
Dynamics of pit filling in heteroepitaxy via phase-field simulations 184
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 184
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 183
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 182
Self-assembled GaAs islands on Si by droplet epitaxy 181
Spontaneous Ge island ordering promoted by partial silicon capping 180
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 180
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 176
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 175
SiGe nano-stressors for Ge strain-engineering 173
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 172
Self-ordering of a Ge island single layer induced by Si overgrowth 171
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 171
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 171
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 171
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 170
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 170
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 169
Si/Ge exchange mechanisms at the Ge(105) surface 169
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 169
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 168
Modelling the kinetic growth mode of GaAs nanomembranes 167
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 165
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 165
Strained MOSFETs on ordered SiGe dots 164
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 162
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 161
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 161
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 160
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 160
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 158
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 158
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 157
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 157
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 155
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 155
Cell cycle effects of gemcitabine 155
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 154
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 153
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 152
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 152
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 151
Continuum modeling of heteroepitaxial growth in semiconductors 151
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 150
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 149
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates 149
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 149
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 149
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 147
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 147
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 146
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 146
Fast isotropic adatom diffusion on Ge(105) dot facets 144
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 144
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 142
Machine learning potential for interacting dislocations in the presence of free surfaces 141
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 140
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 140
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 140
Atomistic modeling of step formation and step bunching at the Ge(105) surface 139
Competing mechanisms in adatom diffusion on a channeled surface: Jumps versus metastable walks 139
Totale 18.964
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Categoria #
all - tutte 112.126
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 112.126
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020704 0 0 0 0 0 0 0 0 0 286 326 92
2020/20214.348 206 162 420 438 335 328 346 321 364 456 270 702
2021/20223.740 263 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20255.153 386 963 417 371 640 337 337 407 808 487 0 0
Totale 32.080