The morphological transition from pyramid to dome islands during the growth of Ge on Si(001)was investigated using high resolution scanning tunneling microscopy (STM). It was observed that the pyramids were grown from top to bottom and that from a critical size on incomplete facets were formed. It was also observed that the bunching of the steps delimiting the facets evolved into the steeper dome facets. It was found that a microscopic model was developed based on first principles and Tersoff-potential calculations for the onset of the morphological transition.
Montalenti, F., Raiteri, P., Migas, D., von Kanel, H., Rastelli, A., Manzano, C., et al. (2004). Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001). PHYSICAL REVIEW LETTERS, 93(21) [10.1103/PhysRevLett.93.216102].
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)
MONTALENTI, FRANCESCO CIMBRO MATTIA
;MIGLIO, LEONIDA
2004
Abstract
The morphological transition from pyramid to dome islands during the growth of Ge on Si(001)was investigated using high resolution scanning tunneling microscopy (STM). It was observed that the pyramids were grown from top to bottom and that from a critical size on incomplete facets were formed. It was also observed that the bunching of the steps delimiting the facets evolved into the steeper dome facets. It was found that a microscopic model was developed based on first principles and Tersoff-potential calculations for the onset of the morphological transition.
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