Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 7.314
EU - Europa 3.879
AS - Asia 1.738
AF - Africa 12
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 6
OC - Oceania 3
Totale 12.958
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Nazione #
US - Stati Uniti d'America 7.211
DE - Germania 901
IT - Italia 880
CN - Cina 660
SG - Singapore 503
SE - Svezia 476
IE - Irlanda 386
RU - Federazione Russa 311
UA - Ucraina 215
GB - Regno Unito 208
VN - Vietnam 205
HK - Hong Kong 162
AT - Austria 128
CA - Canada 101
FI - Finlandia 89
FR - Francia 71
ID - Indonesia 68
DK - Danimarca 47
IN - India 44
ES - Italia 42
TR - Turchia 40
NL - Olanda 38
BE - Belgio 28
CH - Svizzera 28
JP - Giappone 16
BD - Bangladesh 9
KR - Corea 9
PK - Pakistan 7
CI - Costa d'Avorio 6
CZ - Repubblica Ceca 6
EU - Europa 6
PL - Polonia 5
TW - Taiwan 5
BG - Bulgaria 4
BR - Brasile 4
GR - Grecia 4
HU - Ungheria 4
AU - Australia 3
IL - Israele 3
IR - Iran 3
RO - Romania 3
SC - Seychelles 2
AZ - Azerbaigian 1
BZ - Belize 1
CL - Cile 1
EC - Ecuador 1
GW - Guinea-Bissau 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
MU - Mauritius 1
MX - Messico 1
MY - Malesia 1
PH - Filippine 1
SA - Arabia Saudita 1
TN - Tunisia 1
ZA - Sudafrica 1
Totale 12.958
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Città #
Ann Arbor 1.993
Frankfurt am Main 611
Woodbridge 599
Chandler 573
Fairfield 495
Singapore 428
Houston 410
Dublin 367
Milan 361
Ashburn 300
Wilmington 289
Jacksonville 266
Santa Clara 240
Dearborn 201
Seattle 199
Princeton 173
New York 171
Dong Ket 156
Cambridge 152
Hong Kong 149
Nanjing 126
Vienna 115
Guangzhou 90
Jakarta 68
Altamura 61
Shanghai 61
Dresden 59
Beijing 58
Boardman 47
Lawrence 45
Lachine 43
Southend 43
Nanchang 36
San Diego 32
Helsinki 27
Andover 24
Norwalk 24
Chicago 23
Ottawa 23
Brussels 22
Shenyang 22
Hebei 20
Valladolid 20
Hangzhou 19
Jiaxing 18
Tianjin 18
Turin 18
Jinan 16
London 16
Toronto 16
Sacramento 15
Changsha 14
Columbus 14
Kunming 14
Pune 14
Falls Church 13
Hefei 13
Lausanne 13
Los Angeles 13
Torino 13
Fremont 12
Monza 12
Taizhou 12
Dallas 11
Marburg 11
Ningbo 11
Rome 11
Ardea 10
Eindhoven 10
Mountain View 10
Cinisello Balsamo 9
Grafing 9
Urgnano 9
Zhengzhou 9
Edmonton 8
Grumello del Monte 8
Phoenix 8
Amsterdam 7
Nürnberg 7
Redmond 7
Sesto Fiorentino 7
Abidjan 6
Chemnitz 6
Chittagong 6
Fabriano 6
Lanzhou 6
Miyamae Ku 6
Arcore 5
Bologna 5
Cagliari 5
Como 5
Hwaseong-si 5
Kanpur 5
Karlsruhe 5
Kiev 5
Kocaeli 5
Lappeenranta 5
Nantes 5
San Mateo 5
Spirano 5
Totale 9.778
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 346
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 324
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 322
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 316
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 308
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 276
Slip trace-induced terrace erosion 247
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 235
"Divide et impera" in detector technology 230
Dislocation-free SiGe/Si heterostructures 221
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 213
Strain engineering in Ge/GeSn core/shell nanowires 213
Optically reconfigurable polarized emission in Germanium 212
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 212
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 203
A Structural Characterization of GaAs MBE Grown on Si Pillars 197
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 195
3D heteroepitaxy of mismatched semiconductors on silicon 187
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 182
Dynamics of pit filling in heteroepitaxy via phase-field simulations 178
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 176
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 170
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 169
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 169
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 164
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 164
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 160
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 155
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 153
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 153
Modelling the kinetic growth mode of GaAs nanomembranes 153
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 152
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 151
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 149
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 147
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 145
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 145
Continuum modeling of heteroepitaxial growth in semiconductors 143
Ge Crystals on Si Show Their Light 140
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 138
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 137
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 136
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 136
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 134
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 134
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 131
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 127
Morphological evolution and compositional segregation effects in core-shell nanowires 127
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 126
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 126
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 126
Modeling semiconductor heteroepitaxy: a continuum approach 124
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 123
Continuum models of heteroepitaxial growth on patterned substrates 121
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 121
Strain and strain-driven effects in coaxial nanowires 121
Dynamics of pit filling in heteroepitaxy via phase-field simulations 119
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 118
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 117
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 116
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 115
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 114
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 114
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 114
Strain relaxation in semiconductor core/shell nanowires 113
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 113
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 112
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 111
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 111
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 109
Epitaxial Ge-crystal arrays for X-ray detection 109
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 108
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 106
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 104
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 104
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 103
Semiconductor heteroepitaxy 102
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 93
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 92
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 92
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 91
Continuum modeling of the heteroepitaxial growth of semiconductor nanostructures 90
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 85
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 82
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 80
Semiconductor Heteroepitaxy 75
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 69
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 69
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 61
Continuum model of out-of-equilibrium crystal growth: theory and experiments 61
Doubling the mobility of InAs/InGaAs selective area grown nanowires 49
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 47
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 41
Kinetic-control of morphology and composition during the 3D growth of semiconductor nanostructures 31
Ge and Si Microcrystal Photodetectors with Enhanced Infrared Responsivity 20
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 16
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 13
Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired neural networks for the 3D microstructure evolution of materials via Cahn–Hilliard flow 12
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 7
Simulating morphological evolutions by Convolutional Neural Networks 5
Totale 13.576
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Categoria #
all - tutte 43.866
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.866
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.115 0 0 0 0 0 216 287 138 172 108 143 51
2020/20211.975 76 95 179 206 143 147 150 149 167 191 143 329
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20251.502 186 466 210 151 309 180 0 0 0 0 0 0
Totale 13.583