Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 7.523
EU - Europa 4.362
AS - Asia 2.177
SA - Sud America 73
AF - Africa 26
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 4
Totale 14.171
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Nazione #
US - Stati Uniti d'America 7.416
IT - Italia 959
DE - Germania 952
SG - Singapore 750
CN - Cina 671
RU - Federazione Russa 581
SE - Svezia 478
IE - Irlanda 388
HK - Hong Kong 314
UA - Ucraina 223
GB - Regno Unito 215
VN - Vietnam 205
AT - Austria 142
CA - Canada 101
FI - Finlandia 95
FR - Francia 93
ID - Indonesia 69
BR - Brasile 63
DK - Danimarca 48
ES - Italia 48
IN - India 44
TR - Turchia 43
NL - Olanda 41
CH - Svizzera 30
BE - Belgio 28
JP - Giappone 16
BD - Bangladesh 10
KR - Corea 10
PK - Pakistan 9
TW - Taiwan 9
ZA - Sudafrica 9
IL - Israele 7
CI - Costa d'Avorio 6
CZ - Repubblica Ceca 6
EU - Europa 6
KG - Kirghizistan 5
PL - Polonia 5
BG - Bulgaria 4
EC - Ecuador 4
GR - Grecia 4
HU - Ungheria 4
MA - Marocco 4
AU - Australia 3
IR - Iran 3
LU - Lussemburgo 3
LV - Lettonia 3
RO - Romania 3
AL - Albania 2
AZ - Azerbaigian 2
CL - Cile 2
CO - Colombia 2
CR - Costa Rica 2
IQ - Iraq 2
LT - Lituania 2
MD - Moldavia 2
MX - Messico 2
SC - Seychelles 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
BZ - Belize 1
DO - Repubblica Dominicana 1
EG - Egitto 1
GE - Georgia 1
GW - Guinea-Bissau 1
IS - Islanda 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MK - Macedonia 1
MU - Mauritius 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
PY - Paraguay 1
SA - Arabia Saudita 1
UZ - Uzbekistan 1
Totale 14.171
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Città #
Ann Arbor 1.993
Frankfurt am Main 626
Woodbridge 599
Chandler 573
Singapore 544
Fairfield 495
Houston 410
Milan 402
Dublin 367
Ashburn 310
Hong Kong 300
Wilmington 289
Jacksonville 266
Santa Clara 240
Dearborn 201
Seattle 199
Princeton 173
New York 171
Dong Ket 156
Cambridge 152
Nanjing 126
Vienna 122
Guangzhou 92
Council Bluffs 70
Jakarta 68
Altamura 61
Shanghai 61
Beijing 60
Dresden 59
Boardman 47
Lawrence 45
Lachine 43
Southend 43
Nanchang 36
Moscow 34
Helsinki 32
San Diego 32
Los Angeles 26
Andover 24
Norwalk 24
Chicago 23
Ottawa 23
Brussels 22
Shenyang 22
Valladolid 22
Hebei 20
Turin 20
Hangzhou 19
Jiaxing 18
Tianjin 18
Jinan 16
London 16
Toronto 16
Sacramento 15
Changsha 14
Columbus 14
Düsseldorf 14
Kunming 14
Monza 14
Pune 14
Falls Church 13
Hefei 13
Lausanne 13
Torino 13
Fremont 12
Nuremberg 12
Taizhou 12
Dallas 11
Marburg 11
Ningbo 11
Rome 11
Ardea 10
Eindhoven 10
Mountain View 10
Cinisello Balsamo 9
Grafing 9
Urgnano 9
Zhengzhou 9
Edmonton 8
Grumello del Monte 8
Lauterbourg 8
Parma 8
Phoenix 8
São Paulo 8
Amsterdam 7
Nürnberg 7
Redmond 7
Sesto Fiorentino 7
Abidjan 6
Bologna 6
Chemnitz 6
Chittagong 6
Fabriano 6
Lanzhou 6
Lappeenranta 6
Miyamae Ku 6
Arcore 5
Bishkek 5
Cagliari 5
Como 5
Totale 10.267
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 355
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 342
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 338
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 332
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 321
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 289
Slip trace-induced terrace erosion 256
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 243
Dislocation-free SiGe/Si heterostructures 238
"Divide et impera" in detector technology 235
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 232
Optically reconfigurable polarized emission in Germanium 223
Strain engineering in Ge/GeSn core/shell nanowires 221
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 220
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 214
A Structural Characterization of GaAs MBE Grown on Si Pillars 208
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 201
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 198
3D heteroepitaxy of mismatched semiconductors on silicon 193
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 189
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 186
Dynamics of pit filling in heteroepitaxy via phase-field simulations 185
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 184
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 178
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 171
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 171
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 171
Modelling the kinetic growth mode of GaAs nanomembranes 168
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 167
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 160
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 160
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 159
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 159
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 159
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 155
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 154
Ge Crystals on Si Show Their Light 153
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 152
Continuum modeling of heteroepitaxial growth in semiconductors 152
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 152
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 151
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 147
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 143
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 142
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 141
Morphological evolution and compositional segregation effects in core-shell nanowires 139
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 138
Continuum models of heteroepitaxial growth on patterned substrates 137
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 135
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 135
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 134
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 134
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 134
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 133
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 132
Strain and strain-driven effects in coaxial nanowires 130
Modeling semiconductor heteroepitaxy: a continuum approach 130
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 126
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 125
Dynamics of pit filling in heteroepitaxy via phase-field simulations 125
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 124
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 124
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 124
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 124
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 123
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 123
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 122
Strain relaxation in semiconductor core/shell nanowires 120
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 120
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 118
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 117
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 116
Epitaxial Ge-crystal arrays for X-ray detection 116
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 114
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 113
Semiconductor heteroepitaxy 113
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 111
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 106
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 103
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 102
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 101
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 98
Continuum modeling of the heteroepitaxial growth of semiconductor nanostructures 96
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 94
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 92
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 88
Semiconductor Heteroepitaxy 87
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 85
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 78
Continuum model of out-of-equilibrium crystal growth: theory and experiments 71
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 65
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 64
Doubling the mobility of InAs/InGaAs selective area grown nanowires 60
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 60
Kinetic-control of morphology and composition during the 3D growth of semiconductor nanostructures 41
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 40
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 32
Ge and Si Microcrystal Photodetectors with Enhanced Infrared Responsivity 32
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 30
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 30
Totale 14.732
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Categoria #
all - tutte 50.893
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.893
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020302 0 0 0 0 0 0 0 0 0 108 143 51
2020/20211.975 76 95 179 206 143 147 150 149 167 191 143 329
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20252.740 186 466 210 151 309 238 251 218 303 408 0 0
Totale 14.821