Ge and Si micro-crystals, grown on Si patterned substrates, can be used as absorbing elements for photodetection in the near-infrared. In such microstructures, light confinement effects due to crystal facet, enhance light absorption in the near-infrared as compared to conventional epitaxial layers. Devices based on single micro-crystals and on micro-crystals arrays have been fabricated and characterized. The photocurrent of Si photodetectors based on single micro-crystals have been measured in linear and avalanche regime, demonstrating a state-of-the-gain of ≈ 104. Ge-on-Si photodetectors based on micro-crystal arrays, fabricated using graphene as top contact, have also been fabricated, showing a responsivity in the 1500-1800 nm exceeding that of conventional planar devices.
Falcone, V., Barzaghi, A., Signorelli, F., Bergamaschini, R., Valente, J., Paul, D., et al. (2023). Ge and Si Microcrystal Photodetectors with Enhanced Infrared Responsivity. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 (pp.105-106). Institute of Electrical and Electronics Engineers Inc. [10.1109/NMDC57951.2023.10343764].
Ge and Si Microcrystal Photodetectors with Enhanced Infrared Responsivity
Bergamaschini R.;
2023
Abstract
Ge and Si micro-crystals, grown on Si patterned substrates, can be used as absorbing elements for photodetection in the near-infrared. In such microstructures, light confinement effects due to crystal facet, enhance light absorption in the near-infrared as compared to conventional epitaxial layers. Devices based on single micro-crystals and on micro-crystals arrays have been fabricated and characterized. The photocurrent of Si photodetectors based on single micro-crystals have been measured in linear and avalanche regime, demonstrating a state-of-the-gain of ≈ 104. Ge-on-Si photodetectors based on micro-crystal arrays, fabricated using graphene as top contact, have also been fabricated, showing a responsivity in the 1500-1800 nm exceeding that of conventional planar devices.
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