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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
EU - Europa 1.680
NA - Nord America 1.287
AS - Asia 1.038
SA - Sud America 32
AF - Africa 5
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 4.045
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Nazione #
US - Stati Uniti d'America 1.271
SG - Singapore 566
RU - Federazione Russa 530
IE - Irlanda 320
HK - Hong Kong 290
IT - Italia 254
SE - Svezia 252
DE - Germania 197
CN - Cina 110
BR - Brasile 26
GB - Regno Unito 24
ID - Indonesia 24
AT - Austria 22
NL - Olanda 21
UA - Ucraina 21
CA - Canada 14
IN - India 10
CH - Svizzera 8
FI - Finlandia 8
TW - Taiwan 8
BG - Bulgaria 6
FR - Francia 5
CZ - Repubblica Ceca 4
JP - Giappone 4
PH - Filippine 4
AM - Armenia 3
IR - Iran 3
MY - Malesia 3
PL - Polonia 3
VN - Vietnam 3
AR - Argentina 2
BD - Bangladesh 2
EG - Egitto 2
EU - Europa 2
MA - Marocco 2
PK - Pakistan 2
VE - Venezuela 2
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
CR - Costa Rica 1
EC - Ecuador 1
GR - Grecia 1
HR - Croazia 1
KR - Corea 1
MX - Messico 1
NP - Nepal 1
PT - Portogallo 1
RO - Romania 1
TH - Thailandia 1
TR - Turchia 1
UY - Uruguay 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 4.045
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Città #
Singapore 335
Dublin 303
Hong Kong 290
New York 191
Santa Clara 180
Frankfurt am Main 158
Milan 107
Chandler 100
Princeton 100
Ashburn 55
Lawrence 48
Moscow 36
Fairfield 35
Shanghai 35
Beijing 27
Altamura 26
Ann Arbor 25
Ferrara 24
Jakarta 22
Andover 18
Nuremberg 17
San Diego 15
Rome 14
Woodbridge 14
Cambridge 13
Wilmington 13
Bologna 11
Guangzhou 11
London 10
San Giuseppe Vesuviano 10
Toronto 10
Los Angeles 9
Seattle 9
Vienna 9
Pune 8
Shenzhen 8
Falls Church 7
Lappeenranta 7
Houston 6
Kardzhali 6
Munich 6
Zurich 6
Hangzhou 5
Peschiera Borromeo 5
São Paulo 5
Washington 5
Council Bluffs 4
Fuzhou 4
Huskvarna 4
Naples 4
Norwalk 4
Redmond 4
Gravellona Toce 3
Laurel 3
Monza 3
Naaldwijk 3
Novosibirsk 3
Rzeszów 3
Shah Alam 3
Taichung 3
Taipei 3
Amsterdam 2
Bollate 2
Brasília 2
Cairo 2
Chengdu 2
Chicago 2
Genoa 2
Ho Chi Minh City 2
Manaus 2
Mangalore 2
Manila 2
Montreal 2
Montréal 2
New Haven 2
Pavia 2
Pozzuolo Martesana 2
Prescot 2
The Dalles 2
Agadir 1
Americana 1
Apo 1
Baguio City 1
Baku 1
Bangkok 1
Bauru 1
Bern 1
Bragança 1
Burzaco 1
Busto Arsizio 1
Cagayan de Oro 1
Carate Brianza 1
Casimiro de Abreu 1
Castel Maggiore 1
Cavargna 1
Changsha 1
Changzhou 1
Cotia 1
Dallas 1
Dhaka 1
Totale 2.462
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Nome #
X-Band GaN Power Amplifier for Future Generation SAR Systems 91
Scalability of Multifinger HEMT Performance 68
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 66
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 62
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 61
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 60
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 59
Extended operation of class-F power amplifiers using input waveform engineering 58
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 58
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 56
GaN HEMT model extraction based on dynamic-bias measurements 56
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 55
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 55
On the evaluation of the high-frequency load line in active devices 55
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 55
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 54
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 54
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 53
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 53
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 52
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 52
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 52
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 52
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 52
Thermal characterization of high-power GaN HEMTs up to 65 GHz 52
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 51
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 51
Behavioral Modeling of GaN FETs: a Load-Line Approach 51
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 50
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 50
Class-A power amplifier design technique based on electron device low-frequency characterization 50
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 50
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 49
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 49
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 49
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 48
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 48
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 48
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 47
Waveform engineering: State-of-the-art and future trends (invited paper) 46
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 45
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 44
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 44
A procedure for the extraction of a nonlinear microwave GaN FET model 44
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 44
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 44
Current-gain in FETs beyond cut-off frequency 43
Power Amplifier Design Accounting for Input Large-Signal Matching 43
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 43
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 42
GaN power amplifier design exploiting wideband large-signal matching 42
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 42
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 41
75-VDC GaN technology investigation from a degradation perspective 41
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 40
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 40
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 40
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 39
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 39
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 39
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 39
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 39
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 39
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 38
Empowering GaN HEMT models: The gateway for power amplifier design 38
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 37
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 37
“Hybrid” Approach to Microwave Power Amplifier Design 37
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 37
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 37
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 36
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 35
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 35
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 34
Linear versus nonlinear de-embedding: Experimental investigation 34
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 34
Nonlinear Embedding and De-embedding: Theory and Applications 34
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 33
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 33
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 33
Microwave FET model identification based on vector intermodulation measurements 33
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 33
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 32
A new description of fast charge-trapping effects in GaN FETs 32
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 31
A new approach to Class-E power amplifier design 31
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 31
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 30
Extremely Low-Frequency Measurements Using an Active Bias Tee 30
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 29
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 29
Nonlinear model for 40-GHz cold-FET operation 29
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 27
Evaluation of FET performance and restrictions by low-frequency measurements 27
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 26
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 26
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 25
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 25
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 20
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 18
Totale 4.300
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Categoria #
all - tutte 34.003
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.003
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20251.965 137 433 94 121 220 40 131 108 267 414 0 0
Totale 4.334