This paper describes the influence of gate-voltage clipping behavior on drain efficiency in case of class-F and inverse class-F operations under saturated regime. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for mathbfclass -mathbfF -1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT support our analytical results.
Yamamoto, H., Kikuchi, K., Norihiko, U., Inoue, K., Vadala, V., Bosi, G., et al. (2018). Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp.44-47). Institute of Electrical and Electronics Engineers Inc. [10.1109/BCICTS.2018.8551045].
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers
Vadala, Valeria;Bosi, Gianni;
2018
Abstract
This paper describes the influence of gate-voltage clipping behavior on drain efficiency in case of class-F and inverse class-F operations under saturated regime. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for mathbfclass -mathbfF -1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT support our analytical results.
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