VADALÀ, VALERIA

VADALÀ, VALERIA  

DIPARTIMENTO DI FISICA "GIUSEPPE OCCHIALINI"  

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Titolo Tipologia Data di pubblicazione Autori File
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 01 - Articolo su rivista 2025 D'Aniello, FedericoTettamanti, MarcelloShah, Syed Adeel AliVadalà, ValeriaBaschirotto, Andrea +
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 01 - Articolo su rivista 2024 Vadalà V.Bosi G. +
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 02 - Intervento a convegno 2024 Vadala V.Bosi G. +
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 01 - Articolo su rivista 2024 Vadalà V. +
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 01 - Articolo su rivista 2024 Vadalà V. +
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 01 - Articolo su rivista 2024 Vadalà V. +
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 01 - Articolo su rivista 2024 Vadala V.Bosi G. +
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 02 - Intervento a convegno 2024 Bosi G.Vadala Valeria +
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 01 - Articolo su rivista 2024 Vadalà V. +
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 01 - Articolo su rivista 2023 Vadalà Valeria +
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 01 - Articolo su rivista 2023 Bosi G.Vadalà V. +
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 01 - Articolo su rivista 2023 Bosi G.Vadalà Valeria +
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 02 - Intervento a convegno 2023 Vadalà V.Bosi G. +
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 02 - Intervento a convegno 2023 Bosi G.Vadalà V. +
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 02 - Intervento a convegno 2023 Vadalà ValeriaBosi G. +
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 02 - Intervento a convegno 2023 Vadalà Valeria +
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 02 - Intervento a convegno 2022 Vadalà V.Bosi G. +
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 02 - Intervento a convegno 2022 Vadalà ValeriaBosi G. +
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 01 - Articolo su rivista 2022 Bosi G.Vadalà Valeria +
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 01 - Articolo su rivista 2022 Vadalà ValeriaBosi G. +