The goal of the present work is to study the influence of the thermal effects on the small- and large-signal characteristics of gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices by using an extensive campaign of measurements. The studied devices were manufactured using a 0.15-μm process on silicon carbide (SiC) substrate. Experiments carried out on the three HEMTs with different gate widths are investigated in detail to get a thorough comprehension of how changing the backside temperature up to 100°C affects the transistor performance.
Crupi, G., Vadala, V., Bosi, G., Gugliandolo, G., Bao, X., Giofre, R., et al. (2024). An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs. In 2024 IEEE MTT-S International Wireless Symposium, IWS 2024 - Proceedings (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/IWS61525.2024.10713595].
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs
Vadala V.Co-primo
;Bosi G.;
2024
Abstract
The goal of the present work is to study the influence of the thermal effects on the small- and large-signal characteristics of gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices by using an extensive campaign of measurements. The studied devices were manufactured using a 0.15-μm process on silicon carbide (SiC) substrate. Experiments carried out on the three HEMTs with different gate widths are investigated in detail to get a thorough comprehension of how changing the backside temperature up to 100°C affects the transistor performance.
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