Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 3.913
EU - Europa 2.214
AS - Asia 1.050
AF - Africa 22
SA - Sud America 18
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.222
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Nazione #
US - Stati Uniti d'America 3.874
IT - Italia 695
DE - Germania 534
SG - Singapore 331
CN - Cina 311
SE - Svezia 260
IE - Irlanda 199
RU - Federazione Russa 184
HK - Hong Kong 133
VN - Vietnam 82
JP - Giappone 67
GB - Regno Unito 64
UA - Ucraina 63
ID - Indonesia 57
FR - Francia 47
ES - Italia 37
CA - Canada 34
DK - Danimarca 26
FI - Finlandia 22
IN - India 20
BE - Belgio 16
NL - Olanda 15
BR - Brasile 13
AT - Austria 12
MA - Marocco 12
CH - Svizzera 10
PK - Pakistan 9
TW - Taiwan 8
KR - Corea 7
PL - Polonia 7
BD - Bangladesh 6
NO - Norvegia 6
BG - Bulgaria 5
AU - Australia 4
CI - Costa d'Avorio 4
MX - Messico 4
PH - Filippine 4
GR - Grecia 3
SI - Slovenia 3
TR - Turchia 3
AR - Argentina 2
CZ - Repubblica Ceca 2
IR - Iran 2
LK - Sri Lanka 2
NG - Nigeria 2
SA - Arabia Saudita 2
SC - Seychelles 2
ZA - Sudafrica 2
AM - Armenia 1
CL - Cile 1
EC - Ecuador 1
EU - Europa 1
GE - Georgia 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
IS - Islanda 1
OM - Oman 1
PA - Panama 1
PY - Paraguay 1
RO - Romania 1
RS - Serbia 1
TH - Thailandia 1
Totale 7.222
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Città #
Ann Arbor 1.258
Frankfurt am Main 458
Fairfield 296
Singapore 280
Milan 263
Chandler 262
Dublin 191
Wilmington 186
Ashburn 183
Woodbridge 157
Dearborn 138
Houston 133
Hong Kong 125
Seattle 123
Cambridge 114
Santa Clara 111
New York 99
Princeton 94
Dong Ket 68
Jakarta 57
Jacksonville 53
Shanghai 48
Miyamae Ku 40
Altamura 39
Lawrence 38
Nanjing 37
San Diego 30
Guangzhou 25
Beijing 22
Los Angeles 22
Monza 21
Chicago 20
Council Bluffs 18
Paris 17
Shenyang 17
Umeda 17
Andover 16
Como 16
Vigano San Martino 16
Dalmine 15
Hangzhou 14
Turin 14
Hebei 12
Jinan 12
Tianjin 12
Nuremberg 11
Sacramento 11
Toronto 11
Dallas 9
Fremont 9
Helsinki 9
Munich 9
Pune 9
Spirano 9
Cinisello Balsamo 8
Jiaxing 8
Kunming 8
Lappeenranta 8
Norwalk 8
Zhengzhou 8
Berlin 7
Brescia 7
London 7
Nanchang 7
Ningbo 7
Valladolid 7
Ardea 6
Boardman 6
Brussels 6
Cagliari 6
Chittagong 6
Colle 6
College Station 6
Edmonton 6
Fornovo San Giovanni 6
Kitchener 6
Rome 6
Calusco d'Adda 5
Casablanca 5
Cesano Maderno 5
Changsha 5
Chiavenna 5
Chiyoda-ku 5
Desio 5
Grafing 5
Karachi 5
Kiev 5
Leipzig 5
Leuven 5
Lovere 5
Madrid 5
Parma 5
São Paulo 5
Taipei 5
Verdello 5
Abidjan 4
Amsterdam 4
Calcinate 4
Calcio 4
Castegnato 4
Totale 5.540
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Nome #
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 336
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 307
Stability and universal encapsulation of epitaxial Xenes 296
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 242
Tailoring the electronic properties of semiconducting nanocrystal-solids 235
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 232
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 227
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 224
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 188
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 183
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 177
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 171
Vibrational properties of epitaxial silicene layers on (111) Ag 153
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 153
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 152
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 149
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 149
Vibrational Properties of Defective Oxides and 2D Nanolattices 144
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 144
Theoretical aspects of graphene-like group IV semiconductors 143
Hexagonal Diamond phase of Si and Ge by nanoindentation 142
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 140
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 134
Silicene on non-metallic substrates: Recent theoretical and experimental advances 133
Morphological evolution and compositional segregation effects in core-shell nanowires 130
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 124
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 123
Predicting 2D silicon allotropes on SnS2 120
Structural and chemical stabilization of the epitaxial silicene 120
Hexagonal Si and Ge polytypes for silicon photonics 115
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2 107
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 107
New approaches and understandings in the growth of cubic silicon carbide 107
Interaction of silicene and germanene with non-metallic substrates 106
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 106
Theoretical study of transition metal dichalcogenides 101
Synthesis of silicene on alternative substrates 100
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 100
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 97
Interaction of silicene and germanene with non-metallic substrates 90
First-principles study of strained 2D MoS2 89
Structural and vibrational properties of amorphous GeO2from first-principles 83
Unveiling Planar Defects in Hexagonal Group IV Materials 82
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 82
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 81
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 80
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 78
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 74
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 72
Theoretical study of silicene and germanene 70
Electronic properties of hydrogenated silicene and germanene 70
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 69
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 68
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 66
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 64
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 63
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 54
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 50
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 27
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 27
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 23
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 20
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 18
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 13
Totale 7.730
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Categoria #
all - tutte 29.383
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.383
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020377 0 0 0 0 0 0 0 96 122 72 65 22
2020/20211.168 23 49 100 87 91 102 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20251.299 108 312 130 182 217 141 134 75 0 0 0 0
Totale 7.730