GATTI, RICCARDO
 Distribuzione geografica
Continente #
NA - Nord America 1.004
EU - Europa 527
AS - Asia 242
SA - Sud America 2
AF - Africa 1
OC - Oceania 1
Totale 1.777
Nazione #
US - Stati Uniti d'America 985
DE - Germania 111
SE - Svezia 93
CN - Cina 89
UA - Ucraina 73
SG - Singapore 63
IT - Italia 57
IE - Irlanda 54
RU - Federazione Russa 54
GB - Regno Unito 34
HK - Hong Kong 30
VN - Vietnam 29
CA - Canada 19
FI - Finlandia 19
IN - India 13
ES - Italia 9
BE - Belgio 8
JP - Giappone 8
FR - Francia 6
NL - Olanda 6
KR - Corea 3
TW - Taiwan 3
BR - Brasile 2
RO - Romania 2
AT - Austria 1
AU - Australia 1
BD - Bangladesh 1
ID - Indonesia 1
MA - Marocco 1
SA - Arabia Saudita 1
TR - Turchia 1
Totale 1.777
Città #
Woodbridge 159
Ann Arbor 129
Chandler 101
Jacksonville 77
Frankfurt am Main 75
Fairfield 57
Santa Clara 56
Singapore 54
Dublin 52
Houston 49
Ashburn 44
Dearborn 41
Wilmington 33
Hong Kong 30
Princeton 27
Cambridge 26
New York 24
Seattle 23
Dong Ket 20
Milan 20
Shanghai 20
Nanjing 17
Altamura 12
Lachine 12
Council Bluffs 9
Brussels 8
Lawrence 8
Andover 7
Beijing 7
Helsinki 7
Nanchang 7
Oxford 7
Cagliari 6
Guangzhou 6
Hebei 5
Huizen 5
San Diego 5
Suita 5
Auburn Hills 4
Boardman 4
Mountain View 4
Toronto 4
Zhengzhou 4
Jinan 3
Taipei 3
Berlin 2
Falls Church 2
Fisciano 2
Gangnam-gu 2
Genoa 2
Hangzhou 2
Jiaxing 2
Karlsruhe 2
Los Angeles 2
Ningbo 2
Norwalk 2
Ottawa 2
Ringoes 2
Shenyang 2
Atlanta 1
Baotou 1
Brisbane 1
Changsha 1
Chicago 1
Dallas 1
Edmonton 1
Guiyang 1
Jakarta 1
Kiev 1
Kilburn 1
London 1
Lyon 1
Minoh 1
Nellore 1
Novosibirsk 1
Phoenix 1
Rabat 1
Rho 1
Riyadh 1
Seodaemun-gu 1
São Gabriel 1
Tianjin 1
Tokyo 1
Valladolid 1
Varenna 1
Vienna 1
Vigia 1
Xi'an 1
Xiaogan 1
Totale 1.334
Nome #
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 224
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 179
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 165
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 148
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 143
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 134
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 130
Modeling elastic and plastic relaxation in silicon-germanium heteroepitaxial nanostructures 127
A fast computational method for determining equilibrium concentration profiles in intermixed nanoislands 122
SiGe/Si Vertical Heterostructures: Switching the Dislocation Sign by Substrate Under-Etching 121
Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy 117
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 115
Modeling of dislocations in Ge-Si heteroepitaxial systems at the nanoscale 93
Totale 1.818
Categoria #
all - tutte 6.473
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.473


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202092 0 0 0 0 0 0 0 17 39 14 18 4
2020/2021175 18 4 15 18 7 20 15 5 14 20 6 33
2021/2022141 4 15 25 13 5 11 7 9 5 12 12 23
2022/2023360 26 112 47 45 20 52 0 14 28 3 8 5
2023/2024181 6 9 11 3 21 39 35 23 13 1 2 18
2024/2025215 21 62 26 28 28 19 12 19 0 0 0 0
Totale 1.818