We report results of photoluminescence (PL) and Light Beam Induced Current (LBIC) analysis of extended defects in 6H-SiC. The spectroscopical results have been correlated with optical and Atomic Force Microscopy (AFM) analysis of samples before and after selective etching. The PL spectra performed by optical excitation above the band gap in the 10-300 K range show, in particular, an intense emission at 1.8 eV, which could be related to a deep level. PL measurements with optical excitation below the gap have confirmed the presence of another mid gap level. Spatially resolved analysis carried out by LBIC on defective zones suggests that this last mid gap level could be associated to the extended defects.
Binetti, S., LE DONNE, A., Acciarri, M., Cerminara, M., Pizzini, S. (2003). Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy. In P. Bergman, E. Janzén (a cura di), Proceedings of the 4th European Conference on Silicon Carbide and Related Materials; Linkoping; Sweden; 2 September 2002 through 5 September 2002 (pp. 317-320). Trans Tech Publications [10.4028/www.scientific.net/MSF.433-436.317].
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
BINETTI, SIMONA OLGA;LE DONNE, ALESSIA;ACCIARRI, MAURIZIO FILIPPO;Pizzini, S.
2003
Abstract
We report results of photoluminescence (PL) and Light Beam Induced Current (LBIC) analysis of extended defects in 6H-SiC. The spectroscopical results have been correlated with optical and Atomic Force Microscopy (AFM) analysis of samples before and after selective etching. The PL spectra performed by optical excitation above the band gap in the 10-300 K range show, in particular, an intense emission at 1.8 eV, which could be related to a deep level. PL measurements with optical excitation below the gap have confirmed the presence of another mid gap level. Spatially resolved analysis carried out by LBIC on defective zones suggests that this last mid gap level could be associated to the extended defects.
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