LOCATELLI, LORENZO
LOCATELLI, LORENZO
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion
2023 Longo, E; Locatelli, L; Tsipas, P; Lintzeris, A; Dimoulas, A; Fanciulli, M; Longo, M; Mantovan, R
Topological properties of large-area MOCVD-grown Sb2Te3, Bi2Te3 and their combination
2023 Locatelli, L
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon
2022 Longo, E; Belli, M; Alia, M; Rimoldi, M; Cecchini, R; Longo, M; Wiemer, C; Locatelli, L; Tsipas, P; Dimoulas, A; Gubbiotti, G; Fanciulli, M; Mantovan, R
Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substrates
2022 Locatelli, L; Kumar, A; Tsipas, P; Dimoulas, A; Longo, E; Mantovan, R
Large-Area MOVPE Growth of Topological Insulator Bi2Te3Epitaxial Layers on i-Si(111)
2021 Kumar, A; Cecchini, R; Locatelli, L; Wiemer, C; Martella, C; Nasi, L; Lazzarini, L; Mantovan, R; Longo, M
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance
2021 Longo, E; Locatelli, L; Belli, M; Alia, M; Kumar, A; Longo, M; Fanciulli, M; Mantovan, R