SARIKOV, ANDREY
 Distribuzione geografica
Continente #
NA - Nord America 1.396
EU - Europa 620
AS - Asia 271
SA - Sud America 4
AF - Africa 2
Totale 2.293
Nazione #
US - Stati Uniti d'America 1.393
DE - Germania 201
IT - Italia 128
SG - Singapore 122
SE - Svezia 94
RU - Federazione Russa 82
IE - Irlanda 40
CN - Cina 37
VN - Vietnam 36
HK - Hong Kong 24
GB - Regno Unito 23
JP - Giappone 20
ID - Indonesia 16
ES - Italia 14
UA - Ucraina 8
IN - India 7
DK - Danimarca 6
NL - Olanda 5
FR - Francia 4
BE - Belgio 3
BR - Brasile 3
IR - Iran 3
AT - Austria 2
CA - Canada 2
CH - Svizzera 2
FI - Finlandia 2
GR - Grecia 2
IL - Israele 2
NO - Norvegia 2
JM - Giamaica 1
LK - Sri Lanka 1
LU - Lussemburgo 1
NG - Nigeria 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
TR - Turchia 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 2.293
Città #
Ann Arbor 791
Frankfurt am Main 194
Chandler 107
Singapore 101
Milan 84
Wilmington 68
Fairfield 55
Ashburn 38
Dublin 37
Santa Clara 27
Dong Ket 22
Hong Kong 22
Princeton 21
Houston 17
Umeda 17
Jakarta 16
New York 16
Seattle 16
Woodbridge 13
Cambridge 12
Sacramento 10
Malmö 9
Shanghai 9
Dearborn 8
Lawrence 8
Council Bluffs 7
Fremont 7
Moscow 7
Pune 7
Andover 6
Monza 6
Altamura 5
Guangzhou 5
San Diego 5
Ardea 4
Beijing 4
Nanjing 4
Dallas 3
Desio 3
Jacksonville 3
London 3
Los Angeles 3
Novosibirsk 3
Rome 3
Shenyang 3
Valladolid 3
Boardman 2
Brescia 2
Brussels 2
Columbus 2
Düsseldorf 2
Fayetteville 2
Grafing 2
Jinan 2
Meda 2
Nanchang 2
Norwalk 2
Oslo 2
Pioltello 2
Portsmouth 2
Taizhou 2
Amsterdam 1
Arcore 1
Athens 1
Belp 1
Brentford 1
Böblingen 1
Cantù 1
Chiswick 1
Civitavecchia 1
Colombo 1
Florence 1
Groningen 1
Guarulhos 1
Haifa 1
Heidelberg 1
Helsinki 1
Heverlee 1
Itajaí 1
Kocaeli 1
Kunming 1
Lappeenranta 1
Lausanne 1
Lecco 1
Lima 1
Manila 1
Miami 1
Miyamae Ku 1
Nishiōizumi 1
Ottawa 1
Padova 1
Palma 1
Pittsburgh 1
Pullman 1
Rosental 1
San Mateo 1
Shenzhen 1
Southwark 1
Taiyuan 1
Tashkent 1
Totale 1.881
Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 317
In-plane selective area InSb–Al nanowire quantum networks 300
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 253
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 240
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 236
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 233
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 226
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 225
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 206
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 120
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 54
Totale 2.410
Categoria #
all - tutte 7.167
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.167


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202043 0 0 0 0 0 0 0 0 0 19 22 2
2020/2021691 12 13 58 56 49 61 46 65 72 74 64 121
2021/2022503 82 58 84 41 25 37 22 27 20 23 37 47
2022/2023498 69 124 44 79 32 41 2 32 21 27 18 9
2023/2024143 5 12 2 4 20 42 20 3 12 2 3 18
2024/2025383 21 71 42 26 38 25 26 23 35 76 0 0
Totale 2.410