AZADMAND, MANI
AZADMAND, MANI
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices
2023 Musolino, M; Carria, E; Crippa, D; Preti, S; Azadmand, M; Mauceri, M; Isacson, M; Calabretta, M; Messina, A
Opening Through 200 mm Silicon Carbide Epitaxy
2022 Crippa, D; Azadmand, M; Mauceri, M; Preti, S; Puglisi, M; Vecchio, C
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets
2022 Azadmand, M; Vichi, S; Cesura, F; Bietti, S; Chrastina, D; Bonera, E; Vanacore, G; Tsukamoto, S; Sanguinetti, S
Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields
2021 Auzelle, T; Azadmand, M; Flissikowski, T; Ramsteiner, M; Morgenroth, K; Stemmler, C; Fernandez-Garrido, S; Sanguinetti, S; Grahn, H; Geelhaar, L; Brandt, O
Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires
2021 Jaloustre, L; Le Denmat, S; Auzelle, T; Azadmand, M; Geelhaar, L; Dahlem, F; Songmuang, R
Self-Assembly of Well-Separated AlN Nanowires Directly on Sputtered Metallic TiN Films
2020 Azadmand, M; Auzelle, T; Lahnemann, J; Gao, G; Nicolai, L; Ramsteiner, M; Trampert, A; Sanguinetti, S; Brandt, O; Geelhaar, L
PA-MBE Growth and Characterization of Nitride Semiconductors, from InGaN Thin-films to GaN and AlN Self-assembled Nanowires
2019 Azadmand, M
Raman spectroscopy of epitaxial InGaN/Si in the central composition range
2019 Azadmand, M; Bonera, E; Chrastina, D; Bietti, S; Tsukamoto, S; Notzel, R; Sanguinetti, S
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
2018 Azadmand, M; Barabani, L; Bietti, S; Chrastina, D; Bonera, E; Acciarri, M; Fedorov, A; Tsukamoto, S; Nötzel, R; Sanguinetti, S
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures
2016 Azadmand, M; Bietti, S; Barabani, L; Acciarri, M; BASSO BASSET, F; Bonera, E; Fedorov, A; Noetzel, R; Sanguinetti, S