LAMAGNA, LUCA
 Distribuzione geografica
Continente #
NA - Nord America 679
EU - Europa 316
AS - Asia 231
AF - Africa 2
OC - Oceania 1
SA - Sud America 1
Totale 1.230
Nazione #
US - Stati Uniti d'America 661
CN - Cina 60
DE - Germania 60
IT - Italia 58
SG - Singapore 58
HK - Hong Kong 45
SE - Svezia 40
IE - Irlanda 36
UA - Ucraina 32
RU - Federazione Russa 31
GB - Regno Unito 24
CA - Canada 17
KR - Corea 16
VN - Vietnam 16
FI - Finlandia 13
IN - India 8
JP - Giappone 7
BE - Belgio 6
NL - Olanda 6
FR - Francia 5
TR - Turchia 5
TW - Taiwan 4
IR - Iran 3
PK - Pakistan 3
AE - Emirati Arabi Uniti 2
BD - Bangladesh 1
BR - Brasile 1
BZ - Belize 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EG - Egitto 1
ID - Indonesia 1
LA - Repubblica Popolare Democratica del Laos 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PH - Filippine 1
PT - Portogallo 1
RO - Romania 1
Totale 1.230
Città #
Ann Arbor 103
Woodbridge 86
Fairfield 62
Chandler 56
Hong Kong 40
Singapore 37
Frankfurt am Main 36
Houston 34
Jacksonville 34
Dublin 33
Wilmington 31
Ashburn 27
Seattle 25
Santa Clara 23
Cambridge 22
Milan 16
Princeton 16
Dearborn 13
Nanjing 13
Dong Ket 12
New York 8
Beijing 7
Lachine 7
Lawrence 7
Altamura 6
Brussels 6
Los Angeles 6
San Diego 6
Seoul 6
London 5
Ottawa 5
Toronto 5
Amsterdam 4
Bolu 4
Cagliari 4
Changsha 4
Council Bluffs 4
Dayton 4
Duncan 4
Hebei 4
Shanghai 4
Cheongju-si 3
Hsinchu 3
Jiaxing 3
Lappeenranta 3
Mountain View 3
Nanchang 3
Scuola 3
Seongdong-gu 3
Taizhou 3
Andover 2
Boardman 2
Chemnitz 2
Glasgow 2
Helsinki 2
Higashisendai 2
Hyderabad 2
Jinan 2
Newark 2
Padova 2
Palermo 2
Rome 2
Shenzhen 2
Sialkot 2
Urgnano 2
Xian 2
Yokohama 2
Évry 2
Auckland 1
Bari 1
Belize City 1
Benevento 1
Berkeley 1
Chicago 1
Chiyoda-ku 1
Clearwater 1
Daegu 1
Dallas 1
Delhi 1
Dhaka 1
Diadema 1
Dubendorf 1
Erlangen 1
Fagnano Olona 1
Falls Church 1
Ferrara 1
Freiberg 1
Fuzhou 1
Genoa 1
Guangzhou 1
Hangyang 1
Hangzhou 1
Hefei 1
Huizen 1
Isfahan 1
Islamabad 1
Jakarta 1
Kashan 1
Lagos 1
Lahti 1
Totale 924
Nome #
Atomic layer deposition and characterization of rare earth oxides for innovation in microelectronics 261
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface 163
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode 157
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 146
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 143
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 120
Concept design of the LiteBIRD satellite for CMB B-mode polarization 117
Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 115
Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications 22
Totale 1.244
Categoria #
all - tutte 4.557
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.557


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202051 0 0 0 0 0 0 0 0 29 6 14 2
2020/2021114 12 4 14 16 3 5 8 7 7 11 5 22
2021/202288 7 9 20 2 3 7 4 4 7 4 5 16
2022/2023224 18 62 26 14 19 36 2 13 20 6 6 2
2023/2024123 7 5 3 6 19 24 13 8 16 4 5 13
2024/2025203 26 34 14 22 20 28 20 28 11 0 0 0
Totale 1.244