SCOPECE, DANIELE
 Distribuzione geografica
Continente #
NA - Nord America 1.277
EU - Europa 469
AS - Asia 227
SA - Sud America 2
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.977
Nazione #
US - Stati Uniti d'America 1.257
DE - Germania 98
CN - Cina 80
SE - Svezia 69
UA - Ucraina 63
IE - Irlanda 57
SG - Singapore 52
IT - Italia 47
RU - Federazione Russa 45
HK - Hong Kong 34
VN - Vietnam 33
AT - Austria 25
GB - Regno Unito 24
IN - India 21
CA - Canada 20
FI - Finlandia 17
BE - Belgio 8
CH - Svizzera 6
FR - Francia 6
JP - Giappone 3
BR - Brasile 2
ID - Indonesia 2
DK - Danimarca 1
ES - Italia 1
EU - Europa 1
KR - Corea 1
ME - Montenegro 1
MU - Mauritius 1
NL - Olanda 1
TR - Turchia 1
Totale 1.977
Città #
Ann Arbor 169
Woodbridge 138
Fairfield 121
Chandler 119
Houston 117
Jacksonville 75
Ashburn 69
Frankfurt am Main 66
Seattle 57
Dublin 51
Santa Clara 47
Wilmington 47
Dearborn 44
Singapore 41
New York 38
Cambridge 36
Hong Kong 31
Princeton 26
Dong Ket 25
Vienna 25
Milan 16
Nanjing 16
Lachine 13
Shanghai 13
Beijing 12
Lawrence 9
Altamura 8
Brussels 8
Changsha 5
Nanchang 5
Cagliari 4
London 4
Serra 4
Shenyang 4
Andover 3
Boardman 3
Dresden 3
Dubendorf 3
Helsinki 3
Jinan 3
San Diego 3
Toronto 3
Zurich 3
Carp 2
Falls Church 2
Frankfurt An Der Oder 2
Guangzhou 2
Hebei 2
Hefei 2
Jakarta 2
Jiaxing 2
Mountain View 2
Norman 2
Norwalk 2
Pisa 2
Pune 2
Redmond 2
Rio De Janeiro 2
Southampton 2
Taizhou 2
Tianjin 2
Berlin 1
Bremen 1
Buffalo 1
Camden 1
Chicago 1
Dallas 1
Glasgow 1
Haikou 1
Hangzhou 1
Hanover 1
Huizen 1
Kunming 1
Lanzhou 1
Lappeenranta 1
Loreto 1
Los Angeles 1
Medolago 1
Milwaukee 1
Nuremberg 1
Ottawa 1
Phoenix 1
Podgorica 1
Rome 1
Rose Hill 1
San Mateo 1
San Mauro Torinese 1
Sant'ambrogio Di Torino 1
Suzhou 1
Taiyuan 1
University Park 1
Valladolid 1
Zhengzhou 1
Totale 1.558
Nome #
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 210
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 182
SiGe nano-stressors for Ge strain-engineering 166
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 162
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 157
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 152
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 149
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 147
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 147
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 142
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 140
Surface and interface effects on the stability of SiGe nanoislands 129
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 121
Totale 2.004
Categoria #
all - tutte 6.781
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.781


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020202 0 0 0 0 0 0 66 28 49 32 21 6
2020/2021218 20 8 18 20 4 12 23 13 18 23 19 40
2021/2022118 2 13 24 7 4 6 3 14 6 7 7 25
2022/2023369 27 112 42 38 26 49 0 18 42 0 7 8
2023/2024179 10 6 6 1 17 48 33 16 20 1 2 19
2024/2025166 16 58 12 11 33 26 10 0 0 0 0 0
Totale 2.004