BALDOVINO, SILVIA
 Distribuzione geografica
Continente #
NA - Nord America 775
EU - Europa 320
AS - Asia 184
SA - Sud America 5
AF - Africa 1
Totale 1.285
Nazione #
US - Stati Uniti d'America 752
CN - Cina 69
SG - Singapore 68
FR - Francia 67
RU - Federazione Russa 44
UA - Ucraina 38
DE - Germania 33
GB - Regno Unito 33
IT - Italia 28
SE - Svezia 28
IE - Irlanda 27
VN - Vietnam 25
CA - Canada 23
HK - Hong Kong 16
FI - Finlandia 8
BR - Brasile 5
BE - Belgio 4
DK - Danimarca 4
AT - Austria 2
NL - Olanda 2
BD - Bangladesh 1
ID - Indonesia 1
IQ - Iraq 1
IR - Iran 1
PK - Pakistan 1
PL - Polonia 1
RO - Romania 1
TR - Turchia 1
ZA - Sudafrica 1
Totale 1.285
Città #
Ann Arbor 117
Houston 79
Fairfield 77
Woodbridge 71
Ashburn 59
Jacksonville 46
Singapore 43
Wilmington 39
Chandler 35
Seattle 29
Dublin 27
Cambridge 26
Dearborn 25
Frankfurt am Main 23
New York 22
Hong Kong 16
Princeton 16
Dong Ket 13
San Diego 13
Shanghai 13
Nanjing 12
Altamura 11
Toronto 11
Lachine 8
Lawrence 8
Santa Clara 8
Beijing 7
Hebei 6
Milan 6
Andover 5
Changsha 4
Los Angeles 4
Moscow 4
Rome 4
Shenyang 4
Brussels 3
Mountain View 3
Ottawa 3
Paris 3
Guangzhou 2
Jiaxing 2
Jinan 2
Newark 2
Perugia 2
Almirante Tamandaré 1
Amsterdam 1
Asti 1
Baghdad 1
Baturité 1
Candia Lomellina 1
Copenhagen 1
Edmonton 1
Haikou 1
Hangzhou 1
Hefei 1
Huizen 1
Innsbruck 1
Islamabad 1
Jakarta 1
Kocaeli 1
Kunming 1
Leuven 1
Maringá 1
Nanchang 1
Ningbo 1
Norwalk 1
Petilia Policastro 1
Phoenix 1
Qingzhou 1
Ribeirão Preto 1
Romola 1
Shenzhen 1
Sorocaba 1
Tianjin 1
University Park 1
Vienna 1
Washington 1
Weifang 1
Zhengzhou 1
Totale 948
Nome #
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 310
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 169
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 158
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100)Ge/GeO2 interface 156
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface 154
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition 133
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 128
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires 112
Totale 1.320
Categoria #
all - tutte 4.866
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.866


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202036 0 0 0 0 0 0 0 0 0 12 21 3
2020/2021132 12 6 18 17 2 2 8 5 11 18 5 28
2021/2022113 2 9 25 3 2 11 29 2 9 2 8 11
2022/2023158 16 43 22 6 8 23 3 12 12 8 2 3
2023/2024109 3 1 1 1 13 27 14 9 15 4 3 18
2024/2025235 19 38 15 21 28 14 10 22 40 28 0 0
Totale 1.320