A combined analysis, based on angle-resolved X-ray photoelectron spectroscopy and multiple-internalreflection infrared spectroscopy, of the (100) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH2 and SiH3 terminations, but contains (in addition to sub-stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HFaq-etched surface. Copyright © 2007 John Wiley & Sons, Ltd.
Cerofolini, G., Giussani, A., Carone Fabiani, F., Modelli, A., Mascolo, D., Ruggiero, D., et al. (2007). Combined IR and XPS analysis of the native (100) surface of single crystalline silicon after HFaq etching. SURFACE AND INTERFACE ANALYSIS, 39(10), 836-844 [10.1002/sia.2599].
Combined IR and XPS analysis of the native (100) surface of single crystalline silicon after HFaq etching
NARDUCCI, DARIO;
2007
Abstract
A combined analysis, based on angle-resolved X-ray photoelectron spectroscopy and multiple-internalreflection infrared spectroscopy, of the (100) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH2 and SiH3 terminations, but contains (in addition to sub-stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HFaq-etched surface. Copyright © 2007 John Wiley & Sons, Ltd.
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Combined IR and XPS analysis of the native (1 0 0) surface of single-crystalline silicon after HFaq etching.pdf
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