We demonstrate an organic photodetector showing high detectivity (3.4× 1012Hz0.5cm/W) at a wavelength of 700 nm, based on squaraine/phenyl- C61-butyric-acid-methyl-ester bulk-heterojunction active material. This result is achieved by suppressing the device dark currents while simultaneously preserving its external quantum efficiency, as high as 15% at 700 nm. To this aim, a thin cross-linked film based on poly[2-methoxy-5-(2′ -ethyl-hexyloxy)-1,4-phenylene-vinylene] is exploited to suppress electron injection from the device anode into the organic blend, thus reducing the dark currents by a factor of 30, to the extremely low value of 2 nA/cm2. Also, the detector bandwidth (∼1 MHz) is unaffected by the introduction of a blocking layer. © 2011 American Institute of Physics.
Binda, M., Iacchetti, A., Natali, D., Beverina, L., Sassi, M., Sampietro, M. (2011). High detectivity squaraine-based near infrared photodetector with nA/cm2 dark current. APPLIED PHYSICS LETTERS, 98(7), 073303 [10.1063/1.3553767].
High detectivity squaraine-based near infrared photodetector with nA/cm2 dark current
BEVERINA, LUCA;SASSI, MAUROPenultimo
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2011
Abstract
We demonstrate an organic photodetector showing high detectivity (3.4× 1012Hz0.5cm/W) at a wavelength of 700 nm, based on squaraine/phenyl- C61-butyric-acid-methyl-ester bulk-heterojunction active material. This result is achieved by suppressing the device dark currents while simultaneously preserving its external quantum efficiency, as high as 15% at 700 nm. To this aim, a thin cross-linked film based on poly[2-methoxy-5-(2′ -ethyl-hexyloxy)-1,4-phenylene-vinylene] is exploited to suppress electron injection from the device anode into the organic blend, thus reducing the dark currents by a factor of 30, to the extremely low value of 2 nA/cm2. Also, the detector bandwidth (∼1 MHz) is unaffected by the introduction of a blocking layer. © 2011 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.