in semiconductors play a key role in established technologies. Presently, they are increasingly seen as a novel degree of freedom to tailor the optoelectronic properties of materials and to enable novel device functionalities. Here we utilize optical spectroscopy to characterize the spectral feature attributed to extended defects in p-i-n diodes based on Ge/SiGe MQWs. Specifically, we determined the effective lifetime to be in the hundreads of ns regime and we employ an external bias to demonstrate control over the recombination dynamics.
Pedrini, J., Cis, M., Talamas Simola, E., Bonera, E., Isella, G., Pezzoli, F. (2024). Ge-based photonics for quantum technologies. In 2024 IEEE Photonics Society Summer Topicals Meeting Series (SUM) (pp.1-2). Institute of Electrical and Electronics Engineers Inc. [10.1109/SUM60964.2024.10614493].
Ge-based photonics for quantum technologies
Pedrini J.;Bonera E.;Pezzoli F.
2024
Abstract
in semiconductors play a key role in established technologies. Presently, they are increasingly seen as a novel degree of freedom to tailor the optoelectronic properties of materials and to enable novel device functionalities. Here we utilize optical spectroscopy to characterize the spectral feature attributed to extended defects in p-i-n diodes based on Ge/SiGe MQWs. Specifically, we determined the effective lifetime to be in the hundreads of ns regime and we employ an external bias to demonstrate control over the recombination dynamics.
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