Amorphous Ge-rich GeSbTe (GST) alloys show higher thermal stability with respect to the prototypical Ge 2 Sb 2 Te 5 compound which makes them suitable for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST undergoes a phase separation into pure Ge and less Ge-rich GST compound. The details underlying this transformation are, however, largely unknown. To this end, we present a density functional theory study of some decomposition pathways of amorphous Ge-rich GST alloys.
Abou El Kheir, O., Dragoni, D., Bernasconi, M. (2021). Atomistic simulations of the decomposition pathways of Ge-rich GeSbTe alloys for phase change embedded memories. Intervento presentato a: European phase change and ovonic symposium - 2021, Online.
Atomistic simulations of the decomposition pathways of Ge-rich GeSbTe alloys for phase change embedded memories
Abou El Kheir, O
;Dragoni, D;Bernasconi, M
2021
Abstract
Amorphous Ge-rich GeSbTe (GST) alloys show higher thermal stability with respect to the prototypical Ge 2 Sb 2 Te 5 compound which makes them suitable for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST undergoes a phase separation into pure Ge and less Ge-rich GST compound. The details underlying this transformation are, however, largely unknown. To this end, we present a density functional theory study of some decomposition pathways of amorphous Ge-rich GST alloys.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.