Photoemission from a single self-organized GaAs/Al0.3Ga0.7 As quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intradot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.
Kuroda, T., Sanguinetti, S., Gurioli, M., Watanabe, K., Minami, F., Koguchi, N. (2002). Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al0.3Ga0.7As quantum dot. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 66(12), 1213021-1213024 [10.1103/PhysRevB.66.121302].
Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al0.3Ga0.7As quantum dot
Sanguinetti, S;
2002
Abstract
Photoemission from a single self-organized GaAs/Al0.3Ga0.7 As quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intradot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.
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