Photoreflectance spectra of Cd1-xMnxTe/CdTe superlattices with high compositions x = 0. 4,0. 8 were carried out at room temperature and liquid nitrogen temperature. The samples were grown by molecular beam epitaxy ( MBE) technique. Exciton transitions of heavy-and light-holes related to 11H,22H,33H and 11L were observed. After taking into consideration the strain-induced and quantum confinement effects, the theoretical calculations are in very good agreement with our photo-reflectance measurement results except 33H of x = 0.8. Photoluminescence spectra were also performed at room temperature and low temperature in order to compare with our photoreflectance results.
Chen, C., Wang, X., Liang, X., Li, H., Ning, Z., Wang, X., et al. (2002). Study of photoreflectance spectroscopy in semiconductor Cd1-xMnxTe/CdTe superlattices with high compositions. JOURNAL OF INFRARED AND MILLIMETER WAVES, 21(5), 332-336.
Study of photoreflectance spectroscopy in semiconductor Cd1-xMnxTe/CdTe superlattices with high compositions
Tavazzi, S;Borghesi, A;Sassella, A
2002
Abstract
Photoreflectance spectra of Cd1-xMnxTe/CdTe superlattices with high compositions x = 0. 4,0. 8 were carried out at room temperature and liquid nitrogen temperature. The samples were grown by molecular beam epitaxy ( MBE) technique. Exciton transitions of heavy-and light-holes related to 11H,22H,33H and 11L were observed. After taking into consideration the strain-induced and quantum confinement effects, the theoretical calculations are in very good agreement with our photo-reflectance measurement results except 33H of x = 0.8. Photoluminescence spectra were also performed at room temperature and low temperature in order to compare with our photoreflectance results.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.