The manipulation of the spin degree of freedom is highly sought after in the field of spintronics. This study looks at the emergence of Rashba physics in group IV materials, such as p-i-n diodes that contain Ge quantum wells and Si0.15Ge0.85 barriers. By using optical spin orientation, it was found that the circular polarization degree of the direct emission can be increased by increasing the power of the optical pump, while the device remains unbiased. This is attributed to the optical-induced changes in the built-in Rashba field due to the asymmetric doping of the diode structure. These findings can provide a new way to fine-tune the material properties for spin quantum electronic and optical applications.

Rossi, S., Simola, E., Raimondo, M., Acciarri, M., Pedrini, J., Balocchi, A., et al. (2023). Electric-field induced modification of the photoluminescence polarization in Ge/Si0.15Ge0.85 quantum wells. In Proceedings of SPIE - The International Society for Optical Engineering. SPIE [10.1117/12.2678909].

Electric-field induced modification of the photoluminescence polarization in Ge/Si0.15Ge0.85 quantum wells

Rossi S.
Primo
;
Acciarri M.;Pedrini J.;Pezzoli F.
Ultimo
2023

Abstract

The manipulation of the spin degree of freedom is highly sought after in the field of spintronics. This study looks at the emergence of Rashba physics in group IV materials, such as p-i-n diodes that contain Ge quantum wells and Si0.15Ge0.85 barriers. By using optical spin orientation, it was found that the circular polarization degree of the direct emission can be increased by increasing the power of the optical pump, while the device remains unbiased. This is attributed to the optical-induced changes in the built-in Rashba field due to the asymmetric doping of the diode structure. These findings can provide a new way to fine-tune the material properties for spin quantum electronic and optical applications.
paper
Ge quantum wells; Photoluminescence polarization; Rashba effect; Spintronics;
English
Spintronics XVI 2023 - 20 August 2023through 24 August 2023
2023
Wegrowe, JE; Friedman, JS; Razeghi, M
Proceedings of SPIE - The International Society for Optical Engineering
9781510665262
2023
12656
126560I
none
Rossi, S., Simola, E., Raimondo, M., Acciarri, M., Pedrini, J., Balocchi, A., et al. (2023). Electric-field induced modification of the photoluminescence polarization in Ge/Si0.15Ge0.85 quantum wells. In Proceedings of SPIE - The International Society for Optical Engineering. SPIE [10.1117/12.2678909].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/462405
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