Recent Bond-Charge-Model calculations of interplanar force constants for Si and Ge by A. Fleszar and R. Resta have provided an interesting comparison between ab initio and fitted force constants along [001] and [111] directions. Our extensions to polar GaAs and to the [110] direction provide a guideline for ab initio calculations and supply an helpful comparison between different directions for the study of semiconductor superlattice dynamics
Colombo, L., Miglio, L. (1989). Interplanar force-constants in gaas and ge - bond-charge-model vs abinitio calculations. PHYSICA SCRIPTA, 40(2), 238-241 [10.1088/0031-8949/40/2/014].
Interplanar force-constants in gaas and ge - bond-charge-model vs abinitio calculations
MIGLIO, LEONIDA
1989
Abstract
Recent Bond-Charge-Model calculations of interplanar force constants for Si and Ge by A. Fleszar and R. Resta have provided an interesting comparison between ab initio and fitted force constants along [001] and [111] directions. Our extensions to polar GaAs and to the [110] direction provide a guideline for ab initio calculations and supply an helpful comparison between different directions for the study of semiconductor superlattice dynamics
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
