The role played by electric dipoles at the interface Al2O3/In0.53Ga0.47As(001) has been investigated in a whole in situ approach by means of scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy (XPS) in order to study local and macroscopic features, respectively. The initial pinned Fermi level (FL) shifts toward midgap after oxide deposition in both (2 x 4) and (4 x 2) reconstructions, while a reconstruction-dependent FL restoring is observed after annealing at 200 degrees C. This behavior is rationalized in terms of formation and suppression of positive charge in the as-grown oxide resulting from in situ XPS of the interface band line up.
Grazianetti, C., Molle, A., Tallarida, G., Spiga, S., Fanciulli, M. (2012). Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces. JOURNAL OF PHYSICAL CHEMISTRY. C, 116(35), 18746-18751 [10.1021/jp3042318].
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces
GRAZIANETTI, CARLO;FANCIULLI, MARCO
2012
Abstract
The role played by electric dipoles at the interface Al2O3/In0.53Ga0.47As(001) has been investigated in a whole in situ approach by means of scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy (XPS) in order to study local and macroscopic features, respectively. The initial pinned Fermi level (FL) shifts toward midgap after oxide deposition in both (2 x 4) and (4 x 2) reconstructions, while a reconstruction-dependent FL restoring is observed after annealing at 200 degrees C. This behavior is rationalized in terms of formation and suppression of positive charge in the as-grown oxide resulting from in situ XPS of the interface band line up.
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