Results of investigations into the synthesis of heterostructures based on Ge-Si-Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films during structure growth has been controlled by the reflection high-energy electron diffraction method. Films with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions are grown with Sn content changing from 2 to 10% at temperatures in the interval 150-350°C. The stressed state, the composition, and the lattice parameter are studied by the x-ray diffraction method using Omega-scan curves and reciprocal space maps. A tensile strain in the Ge film during Ge/Ge09Sn01/Si structure growth has reached 0.86%.
Timofeev, V., Kokhanenko, A., Nikiforov, A., Mashanov, V., Tuktamyshev, A., Loshkarev, I. (2015). Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions. RUSSIAN PHYSICS JOURNAL, 58(7), 965-969 [10.1007/s11182-015-0596-4].
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions
Tuktamyshev, AR;
2015
Abstract
Results of investigations into the synthesis of heterostructures based on Ge-Si-Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films during structure growth has been controlled by the reflection high-energy electron diffraction method. Films with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions are grown with Sn content changing from 2 to 10% at temperatures in the interval 150-350°C. The stressed state, the composition, and the lattice parameter are studied by the x-ray diffraction method using Omega-scan curves and reciprocal space maps. A tensile strain in the Ge film during Ge/Ge09Sn01/Si structure growth has reached 0.86%.
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