The diffusion of photoexcited carriers in porous silicon strongly affects their recombination dynamics. This is evidenced by a detailed study of the room temperature time-resolved photoluminescence of porous silicon samples with various porosities. Monte Carlo simulations of the photoexcited carrier diffusion by the trap-controlled hopping mechanism in a disordered array of silicon quantum dots have been performed to elucidate the interplay between on-site recombinations and diffusion of carriers. The numerical results are in good qualitative agreement with the experimental data. © 1995.
Pavesi, L., Ceschini, M., Roman, H. (1995). Recombination dynamics in porous silicon. THIN SOLID FILMS, 255(1-2), 67-69 [10.1016/0040-6090(94)05608-G].
Recombination dynamics in porous silicon
Pavesi L.;Roman H. E.
1995
Abstract
The diffusion of photoexcited carriers in porous silicon strongly affects their recombination dynamics. This is evidenced by a detailed study of the room temperature time-resolved photoluminescence of porous silicon samples with various porosities. Monte Carlo simulations of the photoexcited carrier diffusion by the trap-controlled hopping mechanism in a disordered array of silicon quantum dots have been performed to elucidate the interplay between on-site recombinations and diffusion of carriers. The numerical results are in good qualitative agreement with the experimental data. © 1995.
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