This paper presents a 4th-order continuous-time analog filter, with 100 MHz pass-bandwidth, based on the Super-Source-Follower biquadratic cell. The device is designed in order to meet specification for the latest telecommunications standards (LTE and 5G) and to efficiently operate in 16 nm-FinFET technology, exploiting the higher transistor intrinsic gain and efficiency, compared to the CMOS planar counterpart. Nonetheless, this work improves the Source-Follower analog filters state-of-the-art introducing a fully-differential biquadratic cell. The filter achieves 15.1 dBm in-band IIP3 at 10 MHz 11 MHz input tones, with 968 μW power consumption from a single 1V supply voltage. In-band integrated noise is 85.78 μVrms for an overall Figure-of-Merit of 162.8 dB (j-1) which outperforms analog filters state of the art.
Fary, F., De Matteis, M., Rota, L., Arosio, M., Baschirotto, A. (2019). A 16 nm-FinFET 100 MHz 4th-order fully-differential super-source-follower analog filter. In 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 (pp.150-153). 345 E 47TH ST, NEW YORK, NY 10017 USA : Institute of Electrical and Electronics Engineers Inc. [10.1109/ICECS46596.2019.8964837].
A 16 nm-FinFET 100 MHz 4th-order fully-differential super-source-follower analog filter
Fary F.Primo
;De Matteis M.Secondo
;Rota L.;Arosio M.;Baschirotto A.Ultimo
2019
Abstract
This paper presents a 4th-order continuous-time analog filter, with 100 MHz pass-bandwidth, based on the Super-Source-Follower biquadratic cell. The device is designed in order to meet specification for the latest telecommunications standards (LTE and 5G) and to efficiently operate in 16 nm-FinFET technology, exploiting the higher transistor intrinsic gain and efficiency, compared to the CMOS planar counterpart. Nonetheless, this work improves the Source-Follower analog filters state-of-the-art introducing a fully-differential biquadratic cell. The filter achieves 15.1 dBm in-band IIP3 at 10 MHz 11 MHz input tones, with 968 μW power consumption from a single 1V supply voltage. In-band integrated noise is 85.78 μVrms for an overall Figure-of-Merit of 162.8 dB (j-1) which outperforms analog filters state of the art.
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