Borophosphosilicate glasses (BPSG) containing boron and phosphorous in the range 0-12 molar percent were prepared by the sol-gel method, from Si(OCH3)4, B(OCH3)3 and P(OCH3)3 precursors. Infrared, Raman and Electron Paramagnetic Resonance investigations suggested that B and P doping elements substitute Si in the silica network. Thus the low flow temperature (Tf) and the ability to trap Na+ impurities, both properties related to the presence of doping elements, are expected to depend on the stoichiometric composition of glasses.
Canevali, C., Morazzoni, F., Scotti, R., Acierno, V., Vedda, A., Spinolo, G. (2002). Borophosphosilicate glasses for silicon devices: sol-gel synthesis and spectromagnetic characterization. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, 686, 249-254.
Borophosphosilicate glasses for silicon devices: sol-gel synthesis and spectromagnetic characterization
CANEVALI, CARMEN;MORAZZONI, FRANCA;SCOTTI, ROBERTO;VEDDA, ANNA GRAZIELLA;SPINOLO, GIORGIO MARIO
2002
Abstract
Borophosphosilicate glasses (BPSG) containing boron and phosphorous in the range 0-12 molar percent were prepared by the sol-gel method, from Si(OCH3)4, B(OCH3)3 and P(OCH3)3 precursors. Infrared, Raman and Electron Paramagnetic Resonance investigations suggested that B and P doping elements substitute Si in the silica network. Thus the low flow temperature (Tf) and the ability to trap Na+ impurities, both properties related to the presence of doping elements, are expected to depend on the stoichiometric composition of glasses.
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