We present the temperature dependence of the photoluminescence emission of single concentric quantum rings. The two rings which form the nanostructure show a decoupled recombination kinetics in the whole temperature range. The emission is characterized by a doublet. The emission linewidth, which is already larger than 1 meV at low temperatures and increases as the temperature raises, is dominated by the thermal activation of carriers to higher excited states
Bonfanti, M., Sanguinetti, S., Mano, T., Kuroda, T., Gurioli, M., Abbarchi, M., et al. (2006). Temperature dependence of the photoluminescence of single GaAs/AlGaAs concentric quantum ring structure. PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS, 3(11), 3856-3859 [10.1002/pssc.200671577].
Temperature dependence of the photoluminescence of single GaAs/AlGaAs concentric quantum ring structure
BONFANTI, MATTEO;SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;
2006
Abstract
We present the temperature dependence of the photoluminescence emission of single concentric quantum rings. The two rings which form the nanostructure show a decoupled recombination kinetics in the whole temperature range. The emission is characterized by a doublet. The emission linewidth, which is already larger than 1 meV at low temperatures and increases as the temperature raises, is dominated by the thermal activation of carriers to higher excited states
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