We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.
Bietti, S., Somaschini, C., Sanguinetti, S., Koguchi, N., Isella, G., Chrastina, D., et al. (2010). Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates. JOURNAL OF PHYSICS. CONFERENCE SERIES, 245(1), 012078 [10.1088/1742-6596/245/1/012078].
Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates
BIETTI, SERGIO;SOMASCHINI, CLAUDIO;SANGUINETTI, STEFANO;
2010
Abstract
We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.
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