We fabricate high efficiency GaAs/AlGaAs quantum nanostructure active layer for intersubband detectors and light emitting devices on a silicon substrate. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature <= 350 degrees C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits. The realized quantum nanostructures show optical efficiencies comparable to those achievable with state of the art quantum dot materials grown on GaAs substrates
Bietti, S., Somaschini, C., Sanguinetti, S., Koguchi, N., Isella, G., Chrastina, D. (2009). Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si. APPLIED PHYSICS LETTERS, 95(24), 241102 [10.1063/1.3273860].
Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si
BIETTI, SERGIO;SOMASCHINI, CLAUDIO;SANGUINETTI, STEFANO;
2009
Abstract
We fabricate high efficiency GaAs/AlGaAs quantum nanostructure active layer for intersubband detectors and light emitting devices on a silicon substrate. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature <= 350 degrees C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits. The realized quantum nanostructures show optical efficiencies comparable to those achievable with state of the art quantum dot materials grown on GaAs substrates
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