The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good candidates for local artificial substrates with lattice parameters, band alignment and crystalline quality as now required for the implementation of high quality III-As devices on Si.
Bietti, S., Somaschini, C., Koguchi, N., Frigeri, C., Sanguinetti, S. (2011). Self-assembled GaAs local artificial substrates on Si by droplet epitaxy. JOURNAL OF CRYSTAL GROWTH, 323(1), 267-270 [10.1016/j.jcrysgro.2010.12.036].
Self-assembled GaAs local artificial substrates on Si by droplet epitaxy
BIETTI, SERGIOPrimo
;SOMASCHINI, CLAUDIO;SANGUINETTI, STEFANO
2011
Abstract
The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good candidates for local artificial substrates with lattice parameters, band alignment and crystalline quality as now required for the implementation of high quality III-As devices on Si.
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