Photoluminescence (PL) of Gd-doped silica in the ultraviolet (UV) is investigated. The efficient emission detected at 314 nm is due to the 6P7/2 to 8S7/2 transition of a 4f electron of the Gd3+ ion.
He, J., Wang, Y., Steigenberger, S., Macpherson, A., Chiodini, N., Brambilla, G. (2016). Intense ultraviolet photoluminescence at 314 nm in Gd3+-doped silica. Intervento presentato a: 2016 Conference on Lasers and Electro-Optics, CLEO 2016, usa [10.1364/cleo_at.2016.jth2a.86].
Intense ultraviolet photoluminescence at 314 nm in Gd3+-doped silica
Chiodini, N;
2016
Abstract
Photoluminescence (PL) of Gd-doped silica in the ultraviolet (UV) is investigated. The efficient emission detected at 314 nm is due to the 6P7/2 to 8S7/2 transition of a 4f electron of the Gd3+ ion.
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